VNP10N06-E STMicroelectronics, VNP10N06-E Datasheet - Page 9

• Manufacturer Part Number: VNP10N06-E
• Description: MOSFET OMNIFET 60V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VNP10N06-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Peak Output: 10A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 42000 mW
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Input Charge Test Circuit
Fig. 6: Waveforms
VNP10N06
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