VNP10N06-E STMicroelectronics, VNP10N06-E Datasheet

MOSFET OMNIFET 60V 10A TO-220

VNP10N06-E

Manufacturer Part Number
VNP10N06-E
Description
MOSFET OMNIFET 60V 10A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNP10N06-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
150 mOhm
Current - Peak Output
10A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
42000 mW
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP10N06-E
Manufacturer:
NXP
Quantity:
9 000
Part Number:
VNP10N06-E
Manufacturer:
ST
0
Part Number:
VNP10N06-E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
VNP10N06-E
Quantity:
1 400
DESCRIPTION
The VNP10N06 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
tation and overvoltage clamp protect the chip
n harsh enviroments.
BLOCK DIAGRAM
March 2004
VNP10N06
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
LOGIC LEVEL INPUT THRESHOLD
ESD PROTECTION
SCHMITT TRIGGER ON INPUT
HIGH NOISE IMMUNITY
STANDARD TO-220 PACKAGE
TYPE
V
60 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
R
0.3
DS(on)
10 A
I
lim
TO-220
VNP10N06
"OMNIFET":
1
2
3
1/11

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VNP10N06-E Summary of contents

Page 1

... ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY STANDARD TO-220 PACKAGE DESCRIPTION The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limi- tation and overvoltage clamp protect the chip n harsh enviroments ...

Page 2

... VNP10N06 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Input Current in I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (C= 100 pF, R=1 esd P Total Dissipation at T tot T Operating Junction Temperature j T Case Operating Temperature c T Storage Temperature stg ...

Page 3

... di/dt = 100 (see test circuit, figure 5) Test Conditions step from starting gen VNP10N06 Min. Typ. Max. Unit ns 1100 1600 550 900 ns 200 400 ns 100 200 ns 1.2 1 1.5 s 1.6 2.3 s 1.2 1 Min. Typ. Max. Unit 0.8 1.6 V 125 ns 0.22 C 3.5 A Min ...

Page 4

... VNP10N06 PROTECTION FEATURES During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V > The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s ...

Page 5

... Thermal Impedance Output Characteristics Static Drain-Source On Resistance Derating Curve Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance VNP10N06 5/11 ...

Page 6

... VNP10N06 Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/11 Capacitance Variations Normalized On Resistance vs Temperature Turn-on Current Slope ...

Page 7

... Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load VNP10N06 7/11 ...

Page 8

... VNP10N06 Current Limit vs Junction Temperature Source Drain Diode Voltage vs Junction Temperature 8/11 Step Response Current Limit ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms VNP10N06 9/11 ...

Page 10

... VNP10N06 DIM L20 L30 P Q Package Weight 10/11 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2 ...

Page 11

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNP10N06 11/11 ...

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