VO3150A Vishay, VO3150A Datasheet - Page 6

• Manufacturer Part Number: VO3150A
• Description: IC DRIVER IGBT/MOSFET 0.5A 8-DIP
• Manufacturer: Vishay
• Type: High Side/Low Side Driverr

Specifications of VO3150A

• Isolation Voltage: 5300 Vrms
• Input Type: Non-Inverting
• Number Of Outputs: 1
• Current - Output / Channel: 500mA
• Current - Peak Output: 500mA
• Voltage - Supply: 15 V ~ 32 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Fall Time: 0.1 us
• Logic Gate Type: IGBT
• Rise Time: 0.1 us
• Configuration: 1 Channel
• Output Type: Integrated Photo IC
• Maximum Propagation Delay Time: 0.4 us
• Maximum Forward Diode Voltage: 1.6 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 25 mA
• Maximum Continuous Output Current: 0.5 A
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 500mV
• Opto Case Style: DIP
• No. Of Pins: 8
• Output Current: 0.5A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VO3150A
Vishay Semiconductors
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
TYPICAL CHARACTERISTICS (T
www.vishay.com
6
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
V
P
I
T
Creepage distance
Clearance distance
Creepage distance
Clearance distance
SI
the safety ratings shall be ensured by means of prodective circuits.
IOTM
IORM
SI
SO
21705-1
21759
Fig. 9 - High Output Voltage Drop vs. Temperature
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
- 3.0
Fig. 10 - High Output Current vs. Temperature
0.0
2.5
2.0
1.5
1.0
0.5
0.0
- 40 - 20
- 40 - 20
I
R
V
V
I
I
V
V
F
F
OUT
g
CC
EE
CC
EE
= 16 mA
= 16 mA
= 10 Ω, C
= 0 V
= 15 V
= 0 V
= 32 V
= - 100 mA
0
0
Temperature (°C)
Temperature (°C)
20
20
g
= 20 nF
40
40
For technical questions, contact:
60
60
80 100 120
80 100 120
amb
TEST CONDITION
0.5 A Output Current IGBT and
Standard DIP-8
Standard DIP-8
400 mil DIP-8
400 mil DIP-8
= 25 °C, unless otherwise specified)
MOSFET Driver
[e-mail]
SYMBOL
CTI
21707-1
21760
Fig. 11 - Output Low Voltage vs. Temperature
Fig. 12 - Output Low Current vs. Temperature
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2.5
2.0
1.5
1.0
0.5
0.0
- 40 - 20
- 40 - 20
I
R
V
V
F
CC
EE
g
= 0 mA
MIN.
8000
= 10 Ω, C
890
175
= 0 V
= 15 V
7
7
8
8
0
0
Temperature (°C)
Temperature (°C)
20
g
20
40/110/21
= 20 nF
TYP.
40
40
60
V
I
V
V
OUT
60
Document Number: 81808
F(OFF)
CC
EE
= 0 V
= 32 V
= 100 mA
80 100 120
MAX.
80
= 0.8 V
399
500
300
175
Rev. 1.1, 14-Jan-10
100
UNIT
mW
mm
mm
mm
mm
mA
°C
V
V