VO3150A Vishay, VO3150A Datasheet - Page 2

• Manufacturer Part Number: VO3150A
• Description: IC DRIVER IGBT/MOSFET 0.5A 8-DIP
• Manufacturer: Vishay
• Type: High Side/Low Side Driverr

Specifications of VO3150A

• Isolation Voltage: 5300 Vrms
• Input Type: Non-Inverting
• Number Of Outputs: 1
• Current - Output / Channel: 500mA
• Current - Peak Output: 500mA
• Voltage - Supply: 15 V ~ 32 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Fall Time: 0.1 us
• Logic Gate Type: IGBT
• Rise Time: 0.1 us
• Configuration: 1 Channel
• Output Type: Integrated Photo IC
• Maximum Propagation Delay Time: 0.4 us
• Maximum Forward Diode Voltage: 1.6 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 25 mA
• Maximum Continuous Output Current: 0.5 A
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 500mV
• Opto Case Style: DIP
• No. Of Pins: 8
• Output Current: 0.5A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VO3150A
Vishay Semiconductors
Notes
(1)
(2)
(3)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Input forward current
Peak transient input current
Reverse input voltage
Output power dissipation
OUTPUT
High peak output current
Low peak output current
Supply voltage
Output voltage
Output power dissipation
OPTOCOUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
Storage temperature range
Ambient operating temperature range
Total power dissipation
Lead solder temperature
RECOMMENDED OPERATING CONDITION
PARAMETER
Power supply voltage
Input LED current (on)
Input voltage (off)
Operating temperature
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
I
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
O
peak minimum = 0.5 A. See applications section for additional details on limiting I
(2)
(3)
(2)
For technical questions, contact:
for 10 s, 1.6 mm below seating plane
0.5 A Output Current IGBT and
< 1 μs pulse width, 300 pps
(1)
(T
TEST CONDITION
SYMBOL
V
amb
CC
V
T
F(OFF)
amb
I
- V
F
t = 1 s
MOSFET Driver
= 25 °C, unless otherwise specified)
EE
[e-mail]
MIN.
- 40
- 3
15
7
(V
OH
SYMBOL
I
I
V
OH(PEAK)
I
OL(PEAK)
CC
F(TRAN)
O(PEAK)
P
P
T
V
P
T
peak.
V
T
amb
I
diss
diss
ISO
sld
F
- V
tot
R
S
EE
)
- 55 to + 125
- 40 to + 110
MAX.
+ 110
0 to + V
0.8
32
16
0 to + 35
VALUE
5300
250
295
260
0.5
0.5
25
45
1
5
CC
Document Number: 81808
Rev. 1.1, 14-Jan-10
UNIT
mA
UNIT
V
°C
mW
mW
mW
V
V
mA
°C
°C
°C
RMS
A
A
A
V
V
V