VO3150A Vishay, VO3150A Datasheet - Page 3

• Manufacturer Part Number: VO3150A
• Description: IC DRIVER IGBT/MOSFET 0.5A 8-DIP
• Manufacturer: Vishay
• Type: High Side/Low Side Driverr

Specifications of VO3150A

• Isolation Voltage: 5300 Vrms
• Input Type: Non-Inverting
• Number Of Outputs: 1
• Current - Output / Channel: 500mA
• Current - Peak Output: 500mA
• Voltage - Supply: 15 V ~ 32 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Fall Time: 0.1 us
• Logic Gate Type: IGBT
• Rise Time: 0.1 us
• Configuration: 1 Channel
• Output Type: Integrated Photo IC
• Maximum Propagation Delay Time: 0.4 us
• Maximum Forward Diode Voltage: 1.6 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 25 mA
• Maximum Continuous Output Current: 0.5 A
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 500mV
• Opto Case Style: DIP
• No. Of Pins: 8
• Output Current: 0.5A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Note
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
Notes
(1)
(2)
(3)
(4)
Document Number: 81808
Rev. 1.1, 14-Jan-10
THERMAL CHARACTERISTICS
PARAMETER
LED power dissipation
Output power dissipation
Total power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, junction emitter to board
Thermal resistance, junction emitter to case
Thermal resistance, junction detector to board
Thermal resistance, junction detector to case
Thermal resistance, junction emitter to
junction detector
Thermal resistance, case to ambient
ELECTRICAL CHARACTERISTICS
PARAMETER
High level output current
Low level output current
High level output voltage
Low level output voltage
High level supply current
Low level supply current
Threshold input current low to high
Threshold input voltage high to low
Input forward voltage
Temperature coefficient of forward
voltage
Input reverse breakdown voltage
Input capacitance
UVLO threshold
UVLO hysteresis
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal
Characteristics of Optocouplers application note.
Minimum and maximum values were tested over recommended operating conditions (T
V
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at T
Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
I
In this test V
pulse width = 1 ms, maximum duty cycle = 20 %.
O
F(OFF)
peak minimum = 0.5 A.
= - 3 V to 0.8 V, V
OH
is measured with a dc load current. When driving capacitive loads V
amb
= 25 °C and with V
CC
= 15 V to 32 V, V
For technical questions, contact:
I
Output open, V
F
I
Output open, I
F
= 16 mA, R
= 0 mA, R
CC
V
V
EE
0.5 A Output Current IGBT and
TEST CONDITION
I
f = 1 MHz, V
CC
CC
O
- V
= ground) unless otherwise specified. Typical values are characteristics of the device and are
= 0 mA, V
I
SYMBOL
(1)
I
= 15 V, V
= 15 V, V
O
O
EE
I
I
I
I
F
F
F
T
T
g
= - 100 mA
R
V
P
P
θ
θ
g
= 100 mA
θ
θ
θ
P
θ
= 10 mA
= 10 mA
= 10 mA
jmax.
jmax.
= 10 Ω, C
JDB
JDC
= 10 μA
O
JEB
JEC
JED
= 32 V.
diss
diss
CA
= 10 Ω, C
F
tot
F
≥ 5 V
= 7 mA to 16 mA
= - 3 V to + 0.8 V
MOSFET Driver
O
F
EE
EE
> 5 V
= 0 V
= 0 V
= 0 V
g
g
= 20 nF,
VALUE
= 20 nF,
2645
250
285
125
125
169
192
200
45
82
80
[e-mail]
SYMBOL
UVLO
ΔV
V
V
V
I
I
OH
V
OL
I
I
BVΡ
UVLO+
I
UVLO-
OH
V
CCH
C
CCL
F
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
FLH
V
FHL
mW
mW
mW
OL
/ΔT
IN
°C
°C
F
(3)
(3)
(4)
HYS
OH
A
will approach V
V
amb
MIN.
CC
0.5
0.5
0.8
9.5
11
1
5
- 4
= - 40 °C to 110 °C, I
T
19996
JD
Vishay Semiconductors
CC
θ
V
DB
CC
as I
θ
TYP.
- 1.4
12.6
10.7
DC
0.2
2.1
1.3
1.9
60
- 2.1
OH
approaches zero A. Maximum
T
T
T
B
C
θ
A
DE
F(ON)
T
θ
MAX.
θ
A
13.5
CA
0.5
2.5
2.5
1.6
BA
12
5
VO3150A
= 7 mA to 16 mA,
Package
θ
www.vishay.com
EC
θ
EB
mV/°C
T
UNIT
JE
mA
mA
mA
pF
A
A
V
V
V
V
V
V
V
V
3