ISL6622BCRZ Intersil, ISL6622BCRZ Datasheet - Page 6

• Manufacturer Part Number: ISL6622BCRZ
• Description: IC MOSFET DRVR SYNC BUCK 10-DFN
• Manufacturer: Intersil

Specifications of ISL6622BCRZ

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 20ns
• Current - Peak: 1.25A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 36V
• Voltage - Supply: 6.8 V ~ 13.2 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 10-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Description
Operation and Adaptive Shoot-through Protection
Designed for high speed switching, the ISL6622B MOSFET
driver controls both high-side and low-side N-Channel FETs
from one externally provided PWM signal.
A rising transition on PWM initiates the turn-off of the lower
MOSFET (see Figure 1). After a short propagation delay
[t
provided in the “Electrical Specifications” on page 5. Following
a 25ns blanking period, adaptive shoot-through circuitry
monitors the LGATE voltage and turns on the upper gate
following a short delay time [t
drops below ~1.75V. The upper gate drive then begins to rise
[t
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
begins to fall [t
monitors the UGATE-PHASE voltage and turns on the lower
MOSFET a short delay time [t
PHASE voltage drops below +0.8V or 40ns after the upper
MOSFET’s gate voltage [UGATE-PHASE] drops below ~1.75V.
The lower gate then rises [t
These methods prevent both the lower and upper MOSFETs
from conducting simultaneously (shoot-through), while adapting
the dead time to the gate charge characteristics of the
MOSFETs being used.
This driver is optimized for voltage regulators with large step
down ratio. The lower MOSFET is usually sized larger
compared to the upper MOSFET because the lower MOSFET
conducts for a longer time during a switching period. The
lower gate driver is therefore sized much larger to meet this
application requirement. The 0.8
current capability enable the lower gate driver to absorb the
current injected into the lower gate through the drain-to-gate
capacitor of the lower MOSFET and help prevent
PDLL
RU
] and the upper MOSFET turns on.
UGATE
LGATE
], the lower gate begins to fall. Typical fall time [t
PWM
t
PDLL
FU
]. The adaptive shoot-through circuitry
PDLU
] is encountered before the upper gate
RL
t
PDHL
PDHU
], turning on the lower MOSFET.
FL
6
Ω
t
PDHU
] after the upper MOSFET’s
ON-resistance and 3A sink
] after the LGATE voltage
t
RU
t
PDHL
t
RL
t
PDLU
FIGURE 1. TIMING DIAGRAM
FL
t
] is
FU
ISL6622B
1.5V<PWM<3.2V
shoot-through caused by the self turn-on of the lower
MOSFET due to high dV/dt of the switching node.
Advanced PWM Protocol (Patent Pending)
The advanced PWM protocol of ISL6622B is specifically
designed to work with Intersil VR11.1 controllers. When
ISL6622B detects a PSI protocol sent by an Intersil VR11.1
controller, it turns on diode emulation operation; otherwise, it
remains in normal CCM PWM mode.
Another unique feature of ISL6622B and other Intersil drivers
is the addition of a tristate shutdown window to the PWM
input. If the PWM signal enters and remains within the
shutdown window for a set holdoff time, the driver outputs are
disabled and both MOSFET gates are pulled and held low.
The shutdown state is removed when the PWM signal moves
outside the shutdown window. Otherwise, the PWM rising and
falling thresholds outlined in the “Electrical Specifications” on
page 4 determine when the lower and upper gates are
enabled. This feature helps prevent a negative transient on
the output voltage when the output is shut down, eliminating
the Schottky diode that is used in some systems for protecting
the load from reversed output voltage events.
Note that for a PWM low to tri-level (2.5V) transition, the
LGATE will not turn off until the diode emulation minimum
ON-time of 350ns is expired.
Diode Emulation
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active, the
ISL6622B detects the zero current crossing of the output
inductor and turns off LGATE. This prevents the low side
MOSFET from sinking current and ensures that
discontinuous conduction mode (DCM) is achieved. The
LGATE has a minimum ON-time of 350ns in DCM mode.
Gate Voltage Optimization Technology (GVOT)
The ISL6622B provides the user flexibility in choosing the gate
drive voltage for efficiency optimization. In applications when
the switching losses dominate system performance, dropping
t
TSHD
t
PDTS
t
1.0V<PWM<2.6V
TSLD
March 19, 2009
t
PDTS