LT1158ISW#TRPBF Linear Technology, LT1158ISW#TRPBF Datasheet - Page 5
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LT1158ISW#TRPBF
Manufacturer Part Number
LT1158ISW#TRPBF
Description
IC MOSFET DVR 1/2BRDG NCH 16SOIC
Manufacturer
Linear Technology
Datasheet
1.LT1158CNPBF.pdf
(22 pages)
Specifications of LT1158ISW#TRPBF
Configuration
Half Bridge
Input Type
PWM
Current - Peak
500mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
56V
Voltage - Supply
5 V ~ 30 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.300", 7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Delay Time
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL PERFORMANCE CHARACTERISTICS
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.00
1.05
350
300
250
200
150
100
400
50
0
0
0
Current Limit Inhibit
V
Top Gate Rise Time
V2 – V11
DS
5
5
Threshold
10
10
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
15
15
C
C
C
GATE
GATE
GATE
20
20
= 10000pF
= 3000pF
= 1000pF
25
25
30
30
+25°C
–40°C
+85°C
35
LT1158 G10
35
LT1158 G13
40
40
300
250
150
400
350
200
100
350
300
250
200
150
100
400
50
50
0
0
0
0
Bottom Gate Rise Time
Top Gate Fall Time
5
5
10
10
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
15
15
C
C
C
GATE
GATE
GATE
20
20
C
C
C
= 10000pF
= 3000pF
= 1000pF
GATE
GATE
GATE
25
25
= 10000pF
= 3000pF
= 1000pF
30
30
35
LT1158 G11
35
LT1158 G14
40
40
300
250
150
800
100
400
350
200
100
700
600
500
400
300
200
50
0
0
0
0
Bottom Gate Fall Time
Transition Times vs R
V
C
10
+
GATE
5
= 12V
20
= 3000pF
10
GATE RESISTANCE (Ω)
SUPPLY VOLTAGE (V)
30
RISE TIME
15
40
C
C
C
GATE
GATE
GATE
20
50
= 10000pF
= 3000pF
= 1000pF
60
LT1158
25
Gate
FALL TIME
70
30
80
35
LT1158 G12
LT1158 G15
90
1158fb
5
100
40