L6747CTR STMicroelectronics, L6747CTR Datasheet - Page 7

• Manufacturer Part Number: L6747CTR
• Description: IC MOSFET DVR N-CH DUAL 8-VFDFPN
• Manufacturer: STMicroelectronics
• Type: High Current MOSFET Driverr

Specifications of L6747CTR

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 30ns
• Current - Peak: 3.5A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 41V
• Voltage - Supply: 5 V ~ 12 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: *
• Product: MOSFET Gate Drivers
• Propagation Delay Time: 45 ns
• Supply Voltage (max): 12 V
• Supply Voltage (min): 5 V
• Supply Current: 3.5 mA
• Maximum Power Dissipation: 2.25 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 2
• Output Current: 1 A to 1.5 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10612-2

L6747C
Table 5.
1. Parameter(s) guaranteed by design, not fully tested in production
PWM and EN INPUT
PWM
t
t
t
EN
Gate drivers
R
I
R
R
I
R
Protections
V
HiZ
prop_L
prop_H
UGATE
LGATE
PRE_OV
HIHS
LOHS
HILS
LOLS
Symbol
Electrical characteristics (continued)
Input high - V
Input low - V
Input leakage
HiZ hold-off time
Propagation delays
Input High - V
Input Low - V
HS source resistance
HS source current
HS sink resistance
LS source resistance
LS source current
LS sink resistance
Pre-OV threshold
Parameter
PWM_IL
EN_IH
PWM_IH
EN_IH
(1)
(1)
PWM rising
PWM falling
PWM = GND
See
EN rising
EN falling
BOOT - PHASE = 12V;
C
BOOT - PHASE = 12V; 100mA
C
PHASE rising
See
BOOT - PHASE = 12V; 100mA
100mA
100mA
UGATE
LGATE
Doc ID 17127 Rev 1
Figure 4
Figure 4
to GND = 5.6nF
to PHASE = 3.3nF
Test conditions
Min.
1.7
-5
2
2
Electrical specifications
Typ.
120
1.4
3.5
1.0
3.5
1.8
1.4
1.0
25
30
Max.
0.8
0.8
2.0
1.5
1.5
2.0
35
45
5
Unit
μA
ns
ns
ns
Ω
Ω
Ω
Ω
V
V
V
V
A
A
V
7/15