ICB1FL03G Infineon Technologies, ICB1FL03G Datasheet - Page 31

• Manufacturer Part Number: ICB1FL03G
• Description: IC SMART BALLAST CONTROL DSO18
• Manufacturer: Infineon Technologies
• Type: PFC/Ballast Controllerr

Specifications of ICB1FL03G

• Frequency: 20 ~ 100 kHz
• Current - Supply: 5mA
• Voltage - Supply: 8.4 V ~ 17 V
• Operating Temperature: -25°C ~ 125°C
• Package / Case: 20-SOIC (0.300", 7.50mm Width) 18 leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Lead Free Status / Rohs Status: Details

Selected value: R21= 11,0k
Set resistor R22 for preheating frequency, at a projected preheating frequency of 105kHz:
Selected value: R22= 8,2k
Set resistor R23 for preheating time, at a projected preheating time of 900ms:
Selected value: R23= 8,2k
Gate drive resistors R16, R26, R27 are recommended to be equal or higher than 10Ohm.
Shunt resistors R24, R25:
The selected lamp type 54W-T5 requires an ignition voltage of V
resonant inductor is evaluated to L2= 1,46mH and the resonant capacitor C20= 4,7nF. With this inputs we can
calculate the ignition frequency f
The second solution of this equation (with the minus sign) leads to a result of 50163Hz, which is on the capacitive
side of the resonant rise. This value is no solution, because the operating frequency approaches from the higher
frequency level.
In the next step we can calculate the current through the resonant capacitor C20 when reaching a voltage level
of 800V peak.
Preliminary Datasheet Version 1.02
--------------------------
R
R
18
18
I
+
C20
⋅
R
R
19
19
R
f
IGN
22
=
R
=
R
V
23
=
21
V
----------------------------------------------------------------------------------------------
IGN
=
R
PFCCSOFF
=
=
FPH
IGN
R
--------------------------------------- -
4 π
⋅ ⋅
R
TPH
1
2 π f
⋅
FRUN
:
±
=
2
V
----------------------- -
π V
⋅
⋅
4 P
-------------------------------------------- -
f
----------------------------------- - 1
BUS
⋅
=
5 10
L
PH
IGN
⋅
⋅
2
------------------------------------- -
(
=
IGN
⋅
112ms
⋅
OUTPFC
η V
R
⋅
C
T
2 ⋅
R
5 10
-------------------------------- -
8
FRUN
⋅
⋅
20
PH
FRUN
⋅
⋅
C
ΩHz
f
20
INACMIN
RUN
=
[
)
8
ms
⁄
⋅
=
(
kΩ
ΩHz
]
------------------------------------------------------------ -
4 π
–
800V 2 π 69759Hz 4 7nF
31
⋅
)
2
=
=
=
1
⋅
⋅
⋅ ⋅
------------------------------------------------ -
105kHz 11 0k
--------------------------------------- - 1
------------------------------------- -
(
1 46mH
±
112ms
5 10
-------------------------------- -
5 10
,
-------------------- -
π 800V
410V 2 ⋅
2
⋅
⋅
45kHz
⋅
900ms
IGN
=
⋅
8
11 0k
8
= 800V peak. In our application example the
1V 0 95
----------------------------------------------------- -
)
⋅
⋅
⋅
,
⁄
⋅
ΩHz
ΩHz
(
4 7nF
⋅
kΩ
,
,
,
4 55W
)
=
⋅
–
=
⋅
⋅
11 1kΩ
=
180V
,
8 93kΩ
,
,
=
69759Hz
Application Examples
8 4kΩ
,
⋅
=
2
1 65A
,
=
1 1Ω
,
ICB1FL03G
March 2009