MB39A132QN-G-ERE1 Fujitsu Semiconductor America Inc, MB39A132QN-G-ERE1 Datasheet - Page 45

• Manufacturer Part Number: MB39A132QN-G-ERE1
• Description: IC CONV DC-DC LI-ION 32QFN
• Manufacturer: Fujitsu Semiconductor America Inc

Specifications of MB39A132QN-G-ERE1

• Function: Charge Management
• Battery Type: Lithium-Ion (Li-Ion)
• Operating Temperature: 25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 865-1020

DS04–27265–3E
• Allowable loss, and thermal design
In general, the allowable loss and thermal design of this IC can be ignored because this IC is highly effective.
However, when this IC is used with high power supply voltage, high switching frequency, high load, or high
temperature, it is necessary to take account of the allowable loss and thermal design while using this IC.
The IC internal loss (PIC) can be found by the following formula.
The junction temperature (Tj) can be found by the following formula.
P
P
V
I
Qg
f
Tj = Ta + θja × P
Tj
Ta
θja
P
CC
OSC
IC
IC
CC
IC
=
V
: IC internal loss [W]
: Power supply voltage (V
: Power supply current [A] (3.6 mA Max)
: Total charge of all switching FET [C] (Total charge at Vgs = 5 V)
: Switching frequency [Hz]
: Junction temperature [ °C]
: Ambient temperature [ °C]
: QFN-32 package heat resistance (22.7 °C/W)
: IC internal loss [W]
CC
×
(I
CC
+
Qg
IC
×
f
OSC
)
IN
) [V]
MB39A132
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