TC55VCM316BTGN55LA Toshiba, TC55VCM316BTGN55LA Datasheet - Page 9

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TC55VCM316BTGN55LA

Manufacturer Part Number
TC55VCM316BTGN55LA
Description
IC SRAM 8MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC55VCM316BTGN55LA

Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TC55VCM316BTGN55LB
TIMING DIAGRAMS
READ CYCLE
WRITE CYCLE 1 (R/W CONTROLLED)
UB , LB
UB , LB
Address
Address
A0~A18
I/O1~16
A0~A18
I/O1~16
I/O1~16
D
D
CE2
R/W
CE2
OUT
OUT
CE
CE
D
OE
IN
1
1
Hi-Z
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
t
AS
(See Note 1)
t
COE
t
OEE
t
ACC
t
t
CO1
CO2
t
BE
t
OE
t
BA
t
t
t
WC
ODW
RC
t
t
t
CW
CW
BW
t
WP
VALID DATA IN
VALID DATA OUT
t
DS
Hi-Z
t
OEW
t
DH
t
WR
t
BD
t
ODO
t
OD
t
OH
2005-08-11 9/18
(See Note 2)
Hi-Z

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