TC55VCM316BTGN55LA Toshiba, TC55VCM316BTGN55LA Datasheet - Page 8

• Manufacturer Part Number: TC55VCM316BTGN55LA
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM316BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM316BTGN55LB

AC TEST CONDITIONS
Fig.1 : Input rise and fall time
Input pulse level
Input rise and fall time
(Fig.1)
Timing measurements
Reference level
Output load
(Fig.2)
GND
V
DD
10%
PARAMETER
t
R
90%
(Ta = −40 to 85°C, V
High
Low
t
t
V
R1
R2
C
R
F
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
TM
L
t
F
90%
10%
TC55VCM316BTGN
TC55VCM316BSGN
TC55VEM316BXGN
DD
V
DD
V
V
= 2.3 to 3.6 V/1.65 to 2.2 V)
× 0.7 + 0.2 V
1610 Ω
DD
DD
1 V/ns
1 V/ns
810 Ω
30 pF
0.2 V
2.3 V
× 0.5
× 0.5
Fig.2 : Output load
TEST CONDITION
Dout
C
L
V
TM
R1
R2
TC55YCM316BTGN
TC55YCM316BSGN
TC55YEM316BXGN
2005-08-11 8/18
V
V
V
DD
DD
DD
1.65 V
1 V/ns
1 V/ns
470 Ω
740 Ω
30 pF
0.2 V
− 0.2 V
× 0.5
× 0.5