TC55VCM316BTGN55LA Toshiba, TC55VCM316BTGN55LA Datasheet - Page 12

• Manufacturer Part Number: TC55VCM316BTGN55LA
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM316BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM316BTGN55LB

DATA RETENTION CHARACTERISTICS (
Note:
V
I
t
t
CE1
CE2 CONTROLLED DATA RETENTION MODE
SYMBOL
DDS2
CDR
r
(1)
(2)
(3)
(4)
DH
CONTROLLED DATA RETENTION MODE
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V or
CE2 ≥ V
When CE1 is operating at the V
transition of V
When CE1 is operating at the V
transition of V
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V.
(1.65 V)
(See Note 3)
(1.65 V)
(See Note 3)
2.3 V
2.3 V
GND
GND
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode Time
Recovery Time
CE
V
V
V
V
V
DD
DD
IH
IH
1
IL
DD
V
V
CE2
DD
DD
− 0.2 V.
DD
DD
from 2.3(2.7) to 2.2 V(2.4 V).(TC55VCM316B, TC55VEM316B)
from 1.65 to 1.6 V.(TC55YCM316B, TC55YEM316B)
PARAMETER
V
V
V
DH
DH
DH
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
= 3.6 V
= 3.0 V
= 2.2 V
(See Note 2)
t
CDR
t
CDR
Ta = − 40~85°C
Ta = − 40~40°C
Ta = − 40~85°C
IH
IH
(min.) level, the operating current is given by I
(min.) level, the operating current is given by I
Ta = −40° to 85°C
DATA RETENTION MODE
DATA RETENTION MODE
TC55VCM316BSGN
TC55VCM316BTGN
TC55VEM316BXGN
(See Note 4)
MIN
1.5
(See Note 1)
⎯
⎯
⎯
0
5
V
DD
0.2 V
− 0.2 V
MAX
3.6
10
⎯
⎯
⎯
2
)
TC55YCM316BSGN
TC55YCM316BTGN
TC55YEM316BXGN
MIN
1.0
⎯
⎯
⎯
0
5
(See Note 2)
t
2005-08-11 12/18
r
t
r
MAX
2.2
⎯
⎯
10
⎯
⎯
DDS1
DDS1
during the
during the
UNIT
ms
μ A
ns
V