TC55VCM316BTGN55LA Toshiba, TC55VCM316BTGN55LA Datasheet - Page 11

• Manufacturer Part Number: TC55VCM316BTGN55LA
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM316BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM316BTGN55LB

Note:
WRITE CYCLE 4 (
・ Read cycle
・ Write cycle1
・ Write cycle1 to 4
UB , LB
Address
(1) If CE1 (or UB or LB ) goes LOW(or CE2 goes HIGH) coincident with or after R/W goes LOW, the
(2) If CE1 (or UB or LB ) goes HIGH(or CE2 goes LOW) coincident with or before R/W goes HIGH,
Don’t input the same polarity signal as a R/W signal into a OE during the write cycle.
A0~A18
I/O1~16
I/O1~16
D
R/W
CE2
OUT
CE
D
R/W remains HIGH for the read cycle.
outputs will remain at high impedance.
the outputs will remain at high impedance.
If OE is HIGH during the write cycle, the outputs will remain at high impedance.
Because I/O signals may be in the output state at this time, input signals of reverse polarity must
not be applied.
IN
1
UB LB
,
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
CONTROLLED)
t
AS
Hi-Z
t
COE
t
BE
t
t
WC
ODW
t
t
CW
CW
t
BW
t
WP
VALID DATA IN
t
DS
t
DH
t
WR
Hi-Z
2005-08-11 11/18