IDT71016S12Y IDT, Integrated Device Technology Inc, IDT71016S12Y Datasheet - Page 6

• Manufacturer Part Number: IDT71016S12Y
• Description: IC SRAM 1MBIT 12NS 44SOJ
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71016S12Y

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-SOJ
• Density: 1Mb
• Access Time (max): 12ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 16b
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 210mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 71016S12Y

Timing Waveform of Read Cycle No. 2
NOTES:
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS, BHE, or BLE transition LOW; otherwise t
3. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, t
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit)
BHE, BLE
ADDRESS
ADDRESS
BHE
DATA
data to be placed on the bus for the required t
minimum write pulse is as short as the specified t
DATA
DATA
,
BLE
WE
OUT
CS
OE
OUT
CS
IN
PREVIOUS DATA VALID
t
AS
DW
. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the
WP
t
.
CLZ
(3)
(3)
t
WHZ
t
ACS
t
t
t
AW
BLZ
AA
(5)
t
CW
t
(2)
BE
(3)
t
OLZ
(2)
t
t
(2)
BW
WC
t
RC
(3)
6.42
WP
t
6
OE
t
WP
must be greater than or equal to t
(1)
DATA
t
DW
IN
Commercial and Industrial Temperature Ranges
VALID
DATA
AA
t
DH
t
t
is the limiting parameter.
OW
WR
OUT
(5)
WHZ
+ t
VALID
t
OH
DW
t
CHZ
t
BHZ
t
to allow the I/O drivers to turn off and
OHZ
(3)
(3)
DATA VALID
(3)
t
t
CHZ
BHZ
(5)
(1,2,4)
(5)
3210 drw 08
3210 drw 07
,
,