CY7C1339G-133AXET Cypress Semiconductor Corp, CY7C1339G-133AXET Datasheet - Page 12

• Manufacturer Part Number: CY7C1339G-133AXET
• Description: IC SRAM 4MBIT 133MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1339G-133AXET

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05520 Rev. *F
Switching Waveforms
Write Cycle Timing
Note:
19. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW
Data Out (Q)
Data In (D)
ADDRESS
BW[A :D]
ADSP
ADSC
BWE,
ADV
CLK
GW
OE
CE
BURST READ
High-Z
[18, 19]
t ADS
t CES
t AS
A1
t ADH
t CEH
t AH
t CH
t
OEHZ
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t CYC
(continued)
t ADS
t CL
t DS
Single WRITE
D(A1)
t ADH
t DH
A2
D(A2)
DON’T CARE
t WES
D(A2 + 1)
BURST WRITE
t WEH
UNDEFINED
D(A2 + 1)
[A:D]
ADV suspends burst
LOW.
D(A2 + 2)
ADSC extends burst
D(A2 + 3)
t ADS
A3
D(A3)
t ADH
t
ADVS
t WES
Extended BURST WRITE
D(A3 + 1)
CY7C1339G
t
t WEH
ADVH
Page 12 of 18
D(A3 + 2)
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