CY7C199CN-25PXC Cypress Semiconductor Corp, CY7C199CN-25PXC Datasheet - Page 9
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CY7C199CN-25PXC
Manufacturer Part Number
CY7C199CN-25PXC
Description
IC SRAM 256KBIT 25NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-12VXI.pdf
(14 pages)
Specifications of CY7C199CN-25PXC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Write Cycle 3 (WE controlled, OE low)
Note
Document #: 001-06435 Rev. *B
18. The cycle is WE controlled, OE LOW. The minimum write cycle time is the sum of t
Address
In Out
Data
CE
WE
(continued)
Undefined
see footnotes
t
SA
[18]
t
HZWE
t
AW
t
SCE
t
WC
HZWE
t
PWE
and t
SD
t
SD
Data In Valid
.
t
HD
t
LZWE
t
HA
CY7C199CN
See Footnotes
Undefined
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