CY7C199CN-25PXC Cypress Semiconductor Corp, CY7C199CN-25PXC Datasheet - Page 7
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CY7C199CN-25PXC
Manufacturer Part Number
CY7C199CN-25PXC
Description
IC SRAM 256KBIT 25NS 28DIP
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-12VXI.pdf
(14 pages)
Specifications of CY7C199CN-25PXC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Data Retention Waveform
Read Cycle 1
Read Cycle 2
Notes
Document #: 001-06435 Rev. *B
9. Device is continuously selected. OE = V
10. WE is HIGH for read cycle.
11. This cycle is OE controlled and WE is HIGH read cycle.
12. Address valid before or similar with CE transition LOW.
Address
Data Out
Data Out
Current
Address
CE
V
V
CE
OE
CC
CC
[9, 10]
[11, 12]
I
I
CC
SB
Previous Data Valid
High Z
t
CDR
IL
= CE.
t
OHA
t
LZCE
t
DATA RETENTION MODE
PU
t
AA
t
ACE
t
LZOE
50%
t
DOE
t
RC
t
RC
Data Valid
Data Valid
t
R
t
HZOE
CY7C199CN
50%
t
HZCE
t
PD
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High Z