LHF00L29 Sharp Microelectronics, LHF00L29 Datasheet

IC FLASH 16MBIT 70NS 48TSOP

LHF00L29

Manufacturer Part Number
LHF00L29
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LHF00L29

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-1886
P
P
S
RELIMINARY
RODUCT
PECIFICATION
Integrated Circuits Group
LHF00L29
Flash Memory
16M (1Mb x 16)
(Model Number: LHF00L29)
Spec. Issue Date: May 26, 2004
Spec No: FM04503

Related parts for LHF00L29

LHF00L29 Summary of contents

Page 1

... RELIMINARY RODUCT PECIFICATION LHF00L29 Flash Memory 16M (1Mb x 16) (Model Number: LHF00L29) Spec. Issue Date: May 26, 2004 Spec No: FM04503 Integrated Circuits Group ...

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... Medical equipment related to life support, etc. (4) Please direct all queries and comments regarding the interpretation of the above three Paragraphs to a sales representative of the company. • Please direct all queries regarding the products covered herein to a sales representative of the company. LHF00L29 Rev. 2.45 ...

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... Command Definitions ................................................ 9 Functions of Block Lock and Block Lock-Down...... 11 Block Locking State Transitions upon Command Write........................................ 11 Block Locking State Transitions upon WP#/ACC Transition .............................. 12 Status Register Definition......................................... 13 LHF00L29 CONTENTS PAGE 1 Electrical Specifications ........................................ 14 1.1 Absolute Maximum Ratings........................... 14 1.2 Operating Conditions ..................................... 14 1.2.1 Capacitance.............................................. 15 1.2.2 AC Input/Output Test Conditions............ 15 1 ...

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... Special OTP (One Time Program) block provides an area to store permanent code such as an unique number. * ETOX is a trademark of Intel Corporation. LHF00L29 LHF00L29 16Mbit (1Mbit×16) Flash MEMORY Enhanced Data Protection Features • Individual Block Lock and Block Lock-Down with Zero-Latency • ...

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... WE# 11 RST WP#/ACC 14 RY/BY Figure 1. 48-Lead TSOP (Normal Bend) Pinout LHF00L29 48-LEAD TSOP STANDARD PINOUT 12mm x 20mm TOP VIEW GND OE# 28 GND 27 CE Rev. 2.45 ...

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... Characteristics) produce spurious results and should not be attempted. GND SUPPLY GROUND: Do not float any ground pins CONNECT: Lead is not internally connected; it may be driven or floated. LHF00L29 Table 1. Pin Descriptions Name and Function ) deselects the device and reduces power consumption RST# resets internal automation and inhibits write operations IL ) enables normal operation ...

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... LHF00L29 [ FFFFF 64-Kword Block 23 F0000 EFFFF 64-Kword Block 22 E0000 DFFFF 64-Kword Block 21 D0000 CFFFF 64-Kword Block 20 C0000 BFFFF 64-Kword Block 19 B0000 AFFFF 64-Kword Block 18 A0000 9FFFF 64-Kword Block 17 90000 8FFFF 64-Kword Block 16 80000 7FFFF 64-Kword Block 15 70000 6FFFF 64-Kword Block 14 60000 ...

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... Block Lock Configuration Block is Unlocked Code Block is Locked Block is not Locked-Down Block is Locked-Down OTP OTP Lock OTP NOTES: 1. Block Address = The beginning location of a block address OTP-LK=OTP Block Lock configuration. 3. OTP=OTP Block data. LHF00L29 Address Code [ 00000H 00001H Block Address + 2 00080H ...

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... LHF00L29 000088H Customer Programmable Area 000085H 000084H Factory Programmed Area 000081H Reserved for Future Implementation 000080H (DQ - Customer Programmable Area Lock Bit (DQ Factory Programmed Area Lock Bit (DQ Figure 3. OTP Block Address Map for OTP Program (The area outside 80H~88H cannot be used Rev. 2.45 ...

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... RY/BY when the WSM (Write State Machine) is executing internal block erase, full chip erase, program or OTP OL program algorithms High Z during when the WSM is not busy, in block erase suspend mode (with program inactive), program suspend mode, or reset mode. LHF00L29 (1, 2) OE# WE# Address ...

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... If the program operation and the erase operation are both suspended, the suspended program operation will be resumed first. 8. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted while the block erase operation is being suspended. LHF00L29 (10) Table 4. Command Definitions Bus ...

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... Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when WP#/ACC is V When WP#/ACC lock-down bit is disabled and the selected block is unlocked regardless of lock-down IH configuration. 10. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used. LHF00L29 Rev. 2.45 ...

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... When the Set Block Lock-Down Bit command is written to the unlocked block (DQ corresponding block is locked-down and automatically locked at the same time. 3. "No Change" means that the state remains unchanged after the command written this state transitions table, assumes that WP#/ACC is not changed and fixed V LHF00L29 (5) and Block Lock-Down (1) ...

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... State transition from the current state [011] to the next state depends on the previous state. 3. When WP#/ACC is driven to V automatically locked this state transitions table, assumes that lock configuration commands are not written in previous, current and next state. LHF00L29 Result after WP#/ACC Transition (Next State WP#/ACC=0→1 ...

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... WP#/ACC OK SR.2 = PROGRAM SUSPEND STATUS (PSS Program Suspended 0 = Program in Progress/Completed SR.1 = DEVICE PROTECT STATUS (DPS Erase or Program Attempted on a Locked Block, Operation Abort 0 = Unlocked SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) LHF00L29 Table 8. Status Register Definition POPS WPACCS PSS 4 3 Status Register indicates the status of the WSM (Write State Machine) ...

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... See DC Characteristics tables for voltage range-specific specification. 2. Applying WP#/ACC=11.7V-12.3V during a erase or program can be done for a maximum of 1,000 cycles on each block. A permanent connection to WP#/ACC=11.7V-12.3V is not allowed and can cause damage to the device. LHF00L29 *WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage ...

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... Input timing begins, and output timing ends at V Worst case speed conditions are when V Figure 4. Transient Input/Output Reference Waveform for V V (min)/2 CC 1N914 R L =3.3KΩ DEVICE UNDER TEST Includes Jig Capacitances. Figure 5. Transient Equivalent Testing Load Circuit LHF00L29 Condition Min. V =0. =0. =0.0V OUT V /2 TEST POINTS CC (min) for a Logic " ...

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... WP#/ACC Standby or Read Current I ACCR I WP#/ACC Program Current ACCW WP#/ACC Block Erase, I ACCE Full Chip Erase Current WP#/ACC Program I ACCWS Suspend Current WP#/ACC Block Erase I ACCES Current LHF00L29 V =2.7V-3.6V CC Notes Min. Typ. 1 -1.0 1 -1.0 1,6,7 4 Savings 1,3,6 4 1,6 4 1,6 1,4,6 ...

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... Applying 12.0V±0.3V to WP#/ACC during erase/program can only be done for a maximum of 1,000 cycles on each block. WP#/ACC may be connected to 12.0V±0.3V for a total of 80 hours maximum. 6. For all pins other than those shown in test conditions, input level Includes RY/BY#. LHF00L29 DC Characteristics (Continued) V =2.7V-3.6V ...

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... Output Hold from First Occurring Address, CE# or OE# change OH NOTES: 1. See AC input/output reference waveform for timing measurements and maximum allowable input slew rate. 2. Sampled, not 100% tested. ⎯ OE# may be delayed ELQV LHF00L29 (1) V =2.7V-3.6V, T =-40°C to +85° Parameter after the falling edge of CE# without impact to t ...

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... (A) A (A) 19-0 20 CE# ( OE# ( (W) WE High (D/Q) 15 (P) RST LHF00L29 VALID ADDRESS t AVAV t AVQV t ELQV t GLQV t GLQX t ELQX t PHQV Figure 6. AC Waveform for Read Operations 19 t EHQZ t GHQZ t OH VALID OUTPUT Rev. 2.45 ...

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... CE# or WE# (whichever goes low last). Hence after the Read Query or Read Identifier Codes/OTP command=t WHR0 EHR0 7. Refer to Table 4 for valid address and data for block erase, full chip erase, program, OTP program or lock bit configuration. LHF00L29 (1), (2) V =2.7V-3.6V, T =-40°C to +85° Parameter ...

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... NOTES power-up and standby Write each first cycle command. 3. Write each second cycle command or valid address and data. 4. Automated erase or program delay. 5. Read status register data. 6. For read operation, OE# and CE# must be driven active, and WE# de-asserted. LHF00L29 NOTE 3 VALID ADDRESS AVWH AVEH ...

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... If RST# asserted while a block erase, full chip erase, program or OTP program operation is not executing, the reset will complete within 100ns. 5. When the device power-up, holding RST# low minimum 100ns is required after V also has been in stable there. LHF00L29 t PLPH (A) Reset during Read Array Mode SR.7=" ...

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... A latency time is required from writing suspend command (WE# or CE# going high) until SR.7 going "1" or RY/BY# going High the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than t and its sequence is repeated, the block erase operation may not be finished. ERES LHF00L29 V =2.7V-3.6V, T =-40°C to +85° ...

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... Related Document Information Document No. FUM03802 NOTE: 1. International customers should contact their local SHARP or distribution sales offices. LHF00L29 (1) Document Name LHF00LXX series Appendix 24 Rev. 2.45 ...

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A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate ...

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A-1.1.1 Rise and Fall Time Symbol t V Rise Time Input Signal Rise Time R t Input Signal Fall Time F NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the device ...

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A-1.2 Glitch Noises Do not input the glitch noises which are below V as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal V (Min (Max.) IL Input Signal (a) ...

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... A-2 RELATED DOCUMENT INFORMATION Document No. AP-001-SD-E Flash Memory Family Software Drivers AP-006-PT-E Data Protection Method of SHARP Flash Memory RP#, V AP-007-SW-E NOTE: 1. International customers should contact their local SHARP or distribution sales office. (1) Document Name Electric Potential Switching Circuit PP iv Rev. 1.10 ...

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... ALL EXPRESS AND IMPLIED WARRANTIES, INCLUDING THE WARRANTIES OF MERCHANTABILITY, FITNESS FOR USE AND FITNESS FOR A PARTICULAR PURPOSE, ARE SPECIFICALLY EXCLUDED event will SHARP be liable any way responsible, for any incidental or consequential economic or property damage. NORTH AMERICA SHARP Microelectronics of the Americas 5700 NW Pacific Rim Blvd. Camas, WA 98607, U.S.A. Phone: (1) 360-834-2500 ...

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