NAND01GW3A0AN6E STMicroelectronics, NAND01GW3A0AN6E Datasheet - Page 61

IC FLASH 1GBIT 48TSOP

NAND01GW3A0AN6E

Manufacturer Part Number
NAND01GW3A0AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND01GW3A0AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Speed
-
Other names
497-3611

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Company
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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
EPSON
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Manufacturer:
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NAND01GW3A0AN6ES
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NAND01G-B, NAND02G-B
Figure 39. TFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Outline
1. Drawing is not to scale
Table 28.
Symbol
FD1
FE1
ddd
SD
D1
D2
FD
FE
SE
A1
A2
E1
E2
D
A
b
E
e
TFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Mechanical Data
12.00
0.80
0.45
9.50
4.00
7.20
5.60
8.80
0.80
2.75
1.15
3.20
1.60
0.40
0.40
Typ
E
E2
E1
millimeters
BALL "A1"
FD1
FD
e
11.90
A
0.25
0.40
9.40
Min
e
D2
D1
SD
D
12.10
Max
1.20
0.50
9.60
0.10
b
FE1
A1
e
SE
A2
0.0315
0.0177
0.3740
0.1575
0.2835
0.4724
0.2205
0.3465
0.0315
0.1083
0.0453
0.1260
0.0630
0.0157
0.0157
FE
Typ
ddd
0.0098
0.0157
0.3701
0.4685
inches
Min
Package mechanical
0.0472
0.0197
0.3780
0.0039
0.4764
Max
61/64

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