NAND01GW3A0AN6E STMicroelectronics, NAND01GW3A0AN6E Datasheet - Page 49

• Manufacturer Part Number: NAND01GW3A0AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3A0AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Speed: -
• Other names: 497-3611

NAND01G-B, NAND02G-B
Table 24.
1. If t
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WHALH
WHCLH
t
ALHWL
CLHWL
WHCLL
t
ALLWL
CLLWL
WHWL
WHDX
WHEH
WLWH
DVWH
WLWL
ELWL
(1)
ELWL
is less than 10ns, t
Symbol
t
t
t
t
Alt.
t
t
t
t
t
CLS
t
t
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
AC Characteristics for Command, Address, Data Input
Address Latch Low to Write Enable Low
Address Latch High to Write Enable Low
Command Latch High to Write Enable
Low
Command Latch Low to Write Enable Low
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Command Latch
High
Write Enable High to Command Latch
Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
WLWH
must be minimum 35ns, otherwise, t
Parameter
AL Setup time
CL Setup time
Data Setup time
E Setup time
AL Hold time
CL hold time
Data Hold time
E Hold time
W High Hold
time
W Pulse Width
Write Cycle time
WLWH
may be minimum 25ns.
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
DC And AC parameters
Devices
1.8V
20
10
10
10
10
20
25
60
0
0
0
Devices
3V
20
10
10
10
10
20
25
50
0
0
0
49/64
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns