CY7C1370C-167BGC Cypress Semiconductor Corp, CY7C1370C-167BGC Datasheet - Page 19

• Manufacturer Part Number: CY7C1370C-167BGC
• Description: IC SRAM 18MBIT 167MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1370C-167BGC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05233 Rev. *D
Capacitance
Thermal Resistance
Switching Characteristics
C
C
C
AC Test Loads and Waveforms
t
Clock
t
F
t
t
Output Times
t
t
t
t
t
t
t
Shaded areas contain advance information.
Notes:
16. Tested initially and after any design or process changes that may affect these parameters.
17. This part has a voltage regulator internally; tpower is the time power needs to be supplied above Vdd minimum initially, before a Read or Write operation can be
18. t
19. At any given voltage and temperature, t
20. This parameter is sampled and not 100% tested.
21. Timing reference is 1.5V when V
22. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Power
CYC
CH
CL
CO
EOV
DOH
CHZ
CLZ
EOHZ
EOLZ
Parameters
MAX
Parameter
IN
CLK
I/O
Parameter
OUTPUT
initiated.
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
CHZ
Q
Q
[17]
, t
JA
JC
CLZ
, t
EOLZ
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
[16]
, and t
Z
V
Clock Cycle Time
Maximum Operating Frequency
Clock HIGH
Clock LOW
Data Output Valid After CLK Rise
OE LOW to Output Valid
Data Output Hold After CLK Rise
Clock to High-Z
Clock to Low-Z
OE HIGH to Output High-Z
OE LOW to Output Low-Z
0
CC
= 50Ω
Description
EOHZ
(typical) to the first access read or write
(a)
Description
are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
[16]
V
L
= 1.25V
DDQ=
[18, 19, 20]
[18, 19, 20]
Description
R
3.3V and is 1.25V when V
L
EOHZ
Over the Operating Range
= 50Ω
is less than t
Test conditions follow
standard test methods and
procedures for measuring
thermal impedance, per EIA
/ JESD51.
[18, 19, 20]
[18, 19, 20]
Output
T
V
2.5V
INCLUDING
Test Conditions
A
DD
EOLZ
JIG AND
= 25°C, f = 1 MHz,
SCOPE
= 2.5V V
Test Conditions
and t
DDQ=
5 pF
CHZ
2.5V.
DDQ
is less than t
(b)
[ 21, 22]
Min. Max. Min. Max. Min. Max. Min. Max.
4.0
1.7
1.7
1.0
1.0
= 2.5V
R=1667Ω
1
0
-250
R = 1538Ω
CLZ
250
2.6
2.6
2.6
2.6
BGA Typ.
to eliminate bus contention between SRAMs when sharing the same
45
BGA Max.
7
V
0V
4.4
2.0
2.0
1.0
1.0
DD
1
0
8
8
8
-225
< 1.0 ns
225
fBGA Typ.
2.8
2.8
2.8
2.8
10%
90%
46
3
fBGA Max.
2.0
2.0
1.3
1.3
ALL INPUT PULSES
1
5
0
-200
9
9
9
1.25V
TQFP Typ.
200
3.0
3.0
3.0
3.0
(c)
31
6
TQFP Max.
2.2
2.2
1.3
1.3
CY7C1370C
CY7C1372C
1
6
0
-167
5
5
5
[16]
°C/W
°C/W
166
Page 19 of 27
90%
Unit
3.4
3.4
3.4
3.4
10%
< 1.0 ns
Notes
MHz
Unit
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
pF
pF
17
17