CY7C1370C-133AC Cypress Semiconductor Corp, CY7C1370C-133AC Datasheet

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CY7C1370C-133AC

Manufacturer Part Number
CY7C1370C-133AC
Description
IC SRAM 18MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1370C-133AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1507
Cypress Semiconductor Corporation
Document #: 38-05233 Rev. *D
Features
Logic Block Diagram-CY7C1370C (512K x 36)
• Pin-compatible and functionally equivalent to ZBT™
• Supports 250-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write capability
• Single 3.3V power supply
• 3.3V/2.5V I/O power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Available in 100 TQFP, 119 BGA, and 165 fBGA
• IEEE 1149.1 JTAG Boundary Scan
• Burst capability—linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
— Available speed grades are 250, 225, 200 and
the need to use asynchronous OE
operation
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
packages
167 MHz
CEN
CLK
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
b
a
c
d
WRITE ADDRESS
REGISTER 1
REGISTER 0
ADDRESS
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
WRITE REGISTRY
CONTROL LOGIC
WRITE ADDRESS
ADV/LD
3901 North First Street
REGISTER 2
C
A1
A0
D1
D0
512K x 36/1M x 18 Pipelined SRAM
BURST
LOGIC
Q1
Q0
A0'
A1'
DRIVERS
Functional Description
The CY7C1370C and CY7C1372C are 3.3V, 512K x 36 and
1M x 18 Synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL) logic, respectively. They are designed to
support unlimited true back-to-back Read/Write operations
with no wait states. The CY7C1370C and CY7C1372C are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1370C and CY7C1372C are
pin compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
and a Write Enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
WRITE
a
–BW
REGISTER 1
MEMORY
ARRAY
INPUT
d
with NoBL™ Architecture
for CY7C1370C and BW
E
San Jose
N
A
M
S
E
S
E
P
S
E
REGISTER 0
,
INPUT
CA 95134
D
A
A
N
G
T
S
T
E
E
R
I
E
O
U
U
U
T
P
T
B
F
F
E
R
S
E
Revised June 03, 2004
a
–BW
1
DQs
DQP
DQP
DQP
DQP
, CE
CY7C1370C
CY7C1372C
b
a
b
c
d
for CY7C1372C)
2
408-943-2600
, CE
3
) and an

Related parts for CY7C1370C-133AC

CY7C1370C-133AC Summary of contents

Page 1

... Cypress Semiconductor Corporation Document #: 38-05233 Rev. *D 512K x 36/ Pipelined SRAM Functional Description The CY7C1370C and CY7C1372C are 3.3V, 512K x 36 and Synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states ...

Page 2

... WRITE CONTROL LOGIC DRIVERS READ LOGIC Sleep Control CY7C1370C-250 CY7C1370C-225 CY7C1372C-250 CY7C1372C-225 2.6 2.8 350 325 70 70 CY7C1370C CY7C1372C MEMORY E B DQs E ARRAY DQP DQP INPUT INPUT E E REGISTER 1 REGISTER 0 CY7C1370C-200 CY7C1370C-167 CY7C1372C-200 CY7C1372C-167 3.0 3.4 300 275 70 70 Unit Page ...

Page 3

... DQb DQa 18 63 DQa DQb DDQ 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DQPb 24 57 DQa DDQ 27 54 DDQ DQa DQa DQPa CY7C1370C CY7C1372C DQPa 74 DQa 73 DQa DQa 69 DQa CY7C1372C (1M × 18 DQa 63 DQa DQa 59 DQa Page DDQ SS SS DDQ SS DD ...

Page 4

... Pin Configurations (continued DDQ DDQ DDQ DDQ DDQ A V DDQ DDQ DDQ DDQ E(72 DDQ Document #: 38-05233 Rev. *D 119-ball BGA Pinout CY7C1370C (512K × 36) – 14 × 22 BGA ADV/ DQP CLK CEN DQP MODE V DD E(72 TMS TDI TCK CY7C1372C (1M x 18)– BGA ...

Page 5

... P NC E(72 MODE E(36 E(288 CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC E(72 MODE E(36) A Document #: 38-05233 Rev. *D 165-Ball fBGA Pinout CY7C1370C (512K × 36) – 13 × 15 fBGA CLK TDI TMS CY7C1372C (1M × 18) – 13 × 15 fBGA ...

Page 6

... The direction of the pins is [17:0] –DQ are placed in a three-state condition. The outputs are controlled controlled CY7C1370C CY7C1372C and DQP , BW controls and DQP . DQP is controlled DQP is controlled by ...

Page 7

... Burst Read Accesses The CY7C1370C and CY7C1372C have an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs ...

Page 8

... Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1370C and CY7C1372C are common I/O devices, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted ...

Page 9

... Truth Table [ (continued) Operation NOP/WRITE ABORT (Begin Burst) WRITE ABORT (Continue Burst) IGNORE CLOCK EDGE (Stall) SNOOZE MODE Partial Write Cycle Description Function (CY7C1370C) Read Write – No bytes written Write Byte a – (DQ and DQP ) a a Write Byte b – (DQ and DQP ) b b Write Bytes b, a Write Byte c – ...

Page 10

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1370C/CY7C1372C incorporates a serial boundary scan Test Access Port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This port operates in accordance with IEEE Standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compliance ...

Page 11

... TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. CY7C1370C CY7C1372C Page ...

Page 12

... TEST-LOGIC/ 0 IDLE Note: 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05233 Rev. *D [9] SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE- EXIT2-DR 1 UPDATE- CY7C1370C CY7C1372C 1 SELECT IR-SCAN 0 1 CAPTURE- SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page ...

Page 13

... V GND ≤ V ≤ DDQ GND ≤ V ≤ DDQ [12, 13] Over the Operating Range Description (AC) > −0.5V for t < t /2; undershoot: V /2. IL TCYC / ns CY7C1370C CY7C1372C 0 Selection 0 Circuitry 0 0 Min. Max. = 3.3V 2.4 DDQ = 2.5V 1.7 DDQ = 3.3V 2.9 DDQ = 2.5V 2.1 DDQ = 3 ...

Page 14

... Test Mode Select TMS Test Data-In TDI Test Data-Out TDO Document #: 38-05233 Rev. *D [12, 13] Over the Operating Range Description DDQ TMSS t TMSH t TDIS t TDIH t TDOV CY7C1370C CY7C1372C (continued) Min. Max ALL INPUT PULSES 2.5V 1.25V 1 TCYC t TDOX Page Unit ...

Page 15

... Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 38-05233 Rev. *D CY7C1370C CY7C1372C 010 010 01010001000010101 Reserved for future use. 00000110100 00000110100 1 1 Bit Size (x36 Description CY7C1370C CY7C1372C Description Reserved for version number. Allows unique identification of SRAM vendor. Indicate the presence register. Page ...

Page 16

... BGA Boundary Scan Orde CY7C1370C (512K x 36) Bit# Ball ID Bit CY7C1372C (1M x 18) Bit# Ball ID Bit Document #: 38-05233 Rev Ball Not Bonded T3 (Preset Not Bonded R3 (Preset Not Bonded P1 (Preset Not Bonded 20 (Preset Not Bonded D2 (Preset Not Bonded A3 (Preset Not Bonded (Preset to 0) ...

Page 17

... Boundary Scan Order CY7C1370C (512K x 36) Bit# Ball ID Bit B10 43 9 A10 44 10 C11 45 11 E10 46 12 F10 47 13 G10 48 14 D10 49 15 D11 50 16 E11 51 17 F11 52 18 G11 53 19 H11 54 20 J10 55 21 K10 56 22 L10 57 23 ...

Page 18

... V ≤ /2), undershoot: V (AC)> -2V (Pulse width less than t CYC IL (min.) within 200ms. During this time V < CY7C1370C CY7C1372C Ambient Temperature V DD 0°C to +70°C 3.3V–5%/+10% 2.5V –5% to –40°C to +85°C Min. Max. 3.135 3.6 3.135 V DD 2.375 2.625 2 ...

Page 19

... SRAMs when sharing the same EOLZ CHZ CLZ 2.5V. DDQ= CY7C1370C CY7C1372C BGA Max. fBGA Max. TQFP Max [16] ALL INPUT PULSES V DD 90% 1 ...

Page 20

... DH t CLZ D(A1) D(A2) D(A2+1) BURST READ READ WRITE Q(A3) Q(A4) D(A2+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH,CE is HIGH CY7C1370C CY7C1372C -225 -200 -167 1.4 1.4 1.5 1.4 1.4 1.5 1.4 1.4 1.5 1.4 1.4 1.5 1.4 1.4 1.5 1 ...

Page 21

... I/Os are in High-Z when exiting ZZ sleep mode. Document #: 38-05233 Rev. *D [23,24,26 D(A1) Q(A2) STALL READ WRITE STALL Q(A3) D(A4) DON’T CARE DDZZ High-Z DON’T CARE CY7C1370C CY7C1372C D(A4) Q(A3) NOP READ DESELECT Q(A5) UNDEFINED t ZZREC t RZZI DESELECT or READ Only 10 t CHZ Q(A5) ...

Page 22

... CY7C1370C-225AC CY7C1372C-225AC CY7C1370C-225BGC CY7C1372C-225BGC CY7C1370C-225BZC CY7C1372C-225BZC 200 CY7C1370C-200AC CY7C1372C-200AC CY7C1370C-200BGC CY7C1372C-200BGC CY7C1370C-200BZC CY7C1372C-200BZC 167 CY7C1370C-167AC CY7C1372C-167AC CY7C1370C-167BGC CY7C1372C-167BGC CY7C1370C-167BZC CY7C1372C-167BZC Document #: 38-05233 Rev. *D Package Name Package Type A101 100-lead Thin Quad Flat Pack ( 1.4 mm) BG119 119-ball Ball Grid Array ( 2.4 mm) BB165A 165-ball Fine Pitch Ball Grid Array ( ...

Page 23

... CY7C1372C-225BGI CY7C1370C-225BZI CY7C1372C-225BZI 200 CY7C1370C-200AI CY7C1372C-200AI CY7C1370C-200BGI CY7C1372C-200BGI CY7C1370C-200BZI CY7C1372C-200BZI 167 CY7C1370C-167AI CY7C1372C-167AI CY7C1370C-167BGI CY7C1372C-167BGI CY7C1370C-167BZI CY7C1372C-167BZI Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05233 Rev. *D Package Name Package Type A101 100-lead Thin Quad Flat Pack ( ...

Page 24

... MIN. 1.00 REF. DETAIL Document #: 38-05233 Rev. *D DIMENSIONS ARE IN MILLIMETERS. 16.00±0.20 14.00±0. 0.30±0.08 0.65 TYP STAND-OFF 0.05 MIN. SEATING PLANE 0.15 MAX. A CY7C1370C CY7C1372C 1.40±0.05 12°±1° A SEE DETAIL (8X) 0.20 MAX. 1.60 MAX. 51-85050-*A Page ...

Page 25

... Package Diagrams (continued) Document #: 38-05233 Rev. *D 119 Lead PBGA ( 2.4 mm) BG119 CY7C1370C CY7C1372C 51-85115-*B Page ...

Page 26

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 165-Ball FBGA ( 1.2 mm) BB165A CY7C1370C CY7C1372C 51-85122-*C ...

Page 27

... Document History Page Document Title: CY7C1370C/CY7C1372C 512K x 36/ Pipelined SRAM with NoBL™ Architecture Document Number: 38-05233 REV. ECN No. Issue Date ** 116273 08/27/02 *A 121536 11/21/02 *B 206100 see ECN *C 225487 See ECN *D 231349 See ECN Document #: 38-05233 Rev. *D Orig. of Change Description of Change ...

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