MT48H16M32LFCM-75 IT:A TR Micron Technology Inc, MT48H16M32LFCM-75 IT:A TR Datasheet - Page 49

• Manufacturer Part Number: MT48H16M32LFCM-75 IT:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1329-2

Table 13:
Table 14:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Parameter/Condition
Parameter/Condition
Operating current:
Active mode; Burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No
accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
met; No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling
every cycle
Auto refresh current
CKE = HIGH; CS# = HIGH
Deep power-down
Operating current:
Active mode; Burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No
accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
met; No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling
every cycle
Auto refresh current
CKE = HIGH; CS# = HIGH
Deep power-down
I
Notes: 1, 5, 6, 11, 13; notes appear on pages 51–52; V
I
Notes: 1, 5, 6, 11, 13; notes appear on pages 51–52; V
DD
DD
Specifications and Conditions (x16)
Specifications and Conditions (x32)
t
t
RC =
RC =
t
t
t
t
t
t
RC (MIN)
RFC =
RFC = 7.8125µs
RC (MIN)
RFC =
RFC = 7.8125µs
t
t
RFC (MIN)
RFC (MIN)
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
49
t
t
RCD
RCD
DD
DD
Low Power
Low Power
Standard
Standard
Symbol
Symbol
= 1.7V to 1.95V, V
= 1.7V to 1.95V, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
I
DD
DD
DD
I
I
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
I
I
ZZ
ZZ
2N
3N
2N
3N
2P
2P
3P
2P
2P
3P
1
4
5
6
1
4
5
6
500
300
115
500
300
120
-75
-75
95
20
20
30
90
85
10
20
20
30
85
10
5
5
DD
DD
Max
Max
Electrical Specifications
Q = 1.7V to 1.95V
Q = 1.7V to 1.95V
500
300
110
500
300
115
©2005 Micron Technology, Inc. All rights reserved.
90
20
20
30
85
80
10
20
20
30
80
10
-8
-8
5
5
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
12, 18, 19,
12, 18, 19,
Notes
Notes
18, 19
12, 19
12, 19
18, 19
29, 30
18, 19
12, 19
12, 19
18, 19
29, 30
29
26
29
26