MT48H16M32LFCM-75 IT:A TR Micron Technology Inc, MT48H16M32LFCM-75 IT:A TR Datasheet - Page 18

• Manufacturer Part Number: MT48H16M32LFCM-75 IT:A TR
• Description: IC SDRAM 512MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1329-2

Driver Strength
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
WRITE and READ commands occur to any bank selected during standard operation, but
only the selected banks or segments of a bank in PASR will be refreshed during self
refresh. It is important to note that data in unused banks or portions of banks will be lost
when PASR is used.
Bits E5 and E6 of the extended mode register can be used to select the driver strength of
the DQ outputs. This value should be set according to the application’s requirements.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Register Definition