MT45W2MW16BGB-708 WT TR Micron Technology Inc, MT45W2MW16BGB-708 WT TR Datasheet - Page 44

IC PSRAM 32MBIT 70NS 54VFBGA

MT45W2MW16BGB-708 WT TR

Manufacturer Part Number
MT45W2MW16BGB-708 WT TR
Description
IC PSRAM 32MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W2MW16BGB-708 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1318-2
Figure 33:
PDF: 09005aef82832fa2/Source: 09005aef82832f5f
32mb_burst_cr1_0_p24z_2.fm - Rev. E 9/08 EN
DQ[15:0]
LB#/UB#
A[20:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
4-Word Burst READ Operation
High-Z
READ burst identified
Note:
Valid address
t SP
t CSP
(WE# = HIGH)
t SP
t SP
t SP
t CEW
t HD
t HD
t HD
Nondefault BCR settings for 4-word burst READ operation: latency code 2 (3 clocks); WAIT
active LOW; WAIT asserted during delay.
High-Z
32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t ABA
t OLZ
t KHKL
t BOE
t ACLK
t KHTL
Valid output
t CLK
44
t CEM
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Valid output
t KP
Valid output
Don’t Care
©2007 Micron Technology, Inc. All rights reserved.
Valid output
t KP
Timing Diagrams
t HD
t OHZ
t HZ
t CBPH
Undefined
High-Z

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