MT48H4M16LFB4-10 TR Micron Technology Inc, MT48H4M16LFB4-10 TR Datasheet - Page 44

• Manufacturer Part Number: MT48H4M16LFB4-10 TR
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
AH
CH
AS
CL
1
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
MIN
2.5
9.6
2.5
1
3
3
8
1
CLK
A10
CKE
DQ
-8
t CMS
t CKS
t AS
t AS
t AS
MAX
100
100
ACTIVE
BANK 0
T0
ROW
ROW
7
8
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
Figure 40: Alternating Bank Read Accesses
MIN
t CK
2.5
9.6
2.5
12
1
3
3
1
T1
NOP
-10
ENABLE AUTO PRECHARGE
MAX
100
100
t CMS
t CL
7
8
COLUMN m 2
BANK 0
T2
READ
t CMH
t CH
CAS Latency - BANK 0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
T3
NOP
t LZ
t AC
BANK 3
ACTIVE
ROW
44
T4
ROW
D
OUT
t OH
t AC
m
t RCD - BANK 3
SYMBOL
D
T5
OUT
t
t
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
HZ (3)
HZ (2)
t
t
m + 1
t
t OH
CMH
t
CMS
RCD
RRD
RAS
t
t
t
t AC
OH
RC
RP
LZ
ENABLE AUTO PRECHARGE
COLUMN b 2
BANK 3
D
T6
OUT
READ
m + 2
t OH
MIN
t AC
2.5
48
80
19
19
16
CAS Latency - BANK 3
1
1
3
t RP - BANK 0
-8
D
120,000
T7
OUT
NOP
MAX
m + 3
t OH
t AC
7
8
1
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
BANK 0
T8
ROW
ACTIVE
ROW
D
DON’T CARE
UNDEFINED
MIN
OUT
t RCD - BANK 0
2.5
t OH
50
66
20
20
20
t AC
1
1
3
b
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns