MT48H4M16LFB4-10 TR Micron Technology Inc, MT48H4M16LFB4-10 TR Datasheet - Page 33

• Manufacturer Part Number: MT48H4M16LFB4-10 TR
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H4M16LFB4-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15: I
Notes: 4; notes appear on page 34; V
Table 16: Capacitance
Note: 2; notes appear following on page 34
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
TEMPERATURE COMPENSATED SELF REFRESH
PARAMETER/CONDITION
Self Refresh Current:
CKE < 0.2V – 2 Banks Open
Self Refresh Current:
CKE < 0.2V – 1 Bank Open
Self Refresh Current:
CKE < 0.2V – 1/2 Bank Open
Self Refresh Current:
CKE < 0.2V – 1/4 Bank Open
PARAMETER
Self Refresh Current:
CKE < 0.2V – 4 Banks Open
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQ
DD
7 - Self Refresh Current Options
DD
= V
DD
Q = +1.8V ±0.1V
33
TEMPERATURE
SYMBOL
C
C
C
MAX
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
IO
I 1
I2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
1.5
1.5
3.0
-8 & -10
160
130
110
100
130
100
110
105
100
90
80
80
70
65
75
65
65
75
65
65
MAX
4.0
4.0
6.0
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
UNITS
64Mb: x16
pF
pF
pF
NOTES
NOTES
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
29
30
31