MT48H8M32LFB5-8 IT TR Micron Technology Inc, MT48H8M32LFB5-8 IT TR Datasheet - Page 70
MT48H8M32LFB5-8 IT TR
Manufacturer Part Number
MT48H8M32LFB5-8 IT TR
Description
IC SDRAM 256MBIT 8NS 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48V8M32LFB5-8_IT_TR.pdf
(75 pages)
Specifications of MT48H8M32LFB5-8 IT TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
8ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1053-1
MT48H8M32LFB5-8 IT
MT48H8M32LFB5-8 IT
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Figure 48: Single Write – Without Auto Precharge
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
A0–A9, A11
COMMAND
BA0, BA1
DQM 0-3
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 1, and the WRITE burst is followed by a manual PRECHARGE.
t CK
T1
NOP
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed else
DISABLE AUTO PRECHARGE
quency.
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
t CMS
t CL
COLUMN m 3
t DS
T2
WRITE
BANK
D
IN
t CH
t CMH
m
t DH
t WR 2
T3
NOP 4
70
IN
T4
NOP 4
m> and the PRECHARGE command, regardless of fre-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANK
ALL BANKS
PRECHARGE
BANK
t
T5
1
RAS would be violated.
256Mb: x32 Mobile SDRAM
T6
t RP
NOP
©2003 Micron Technology, Inc. All rights reserved.
BANK
ROW
ACTIVE
T7
Timing Diagrams
T8
NOP
DON’T CARE
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