MT48H8M32LFB5-8 IT TR Micron Technology Inc, MT48H8M32LFB5-8 IT TR Datasheet - Page 28
![IC SDRAM 256MBIT 8NS 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48H8M32LFB5-8 IT TR
Manufacturer Part Number
MT48H8M32LFB5-8 IT TR
Description
IC SDRAM 256MBIT 8NS 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48V8M32LFB5-8_IT_TR.pdf
(75 pages)
Specifications of MT48H8M32LFB5-8 IT TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
8ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1053-1
MT48H8M32LFB5-8 IT
MT48H8M32LFB5-8 IT
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- Download datasheet (3Mb)
Figure 12: READ to WRITE
Figure 13: READ to WRITE with Extra Clock Cycle
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Note:
Note:
CL = 3. The READ command may be to any bank, and the WRITE command may be to any
bank. If a burst of one is used, then DQM is not required.
CL = 3. The READ command may be to any bank, and the WRITE command may be to any
bank.
COMMAND
ADDRESS
COMMAND
DQM
ADDRESS
CLK
DQ
DQM
CLK
DQ
BANK,
COL n
T0
READ
T0
BANK,
COL n
28
READ
T1
NOP
T1
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2
NOP
T2
NOP
T3
NOP
256Mb: x32 Mobile SDRAM
t HZ
D
OUT
T3
NOP
D
n
t HZ
OUT
t CK
n
T4
NOP
DON’T CARE
©2003 Micron Technology, Inc. All rights reserved.
T4
BANK,
COL b
WRITE
DON’T CARE
D
IN
b
T5
t
BANK,
COL b
WRITE
DS
D
IN
b
t
DS
Operation
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