AT45DB321D-SU Atmel, AT45DB321D-SU Datasheet - Page 47
![IC FLASH 32MBIT 66MHZ 8SOIC](/photos/6/50/65032/453-8-soic_sml.jpg)
AT45DB321D-SU
Manufacturer Part Number
AT45DB321D-SU
Description
IC FLASH 32MBIT 66MHZ 8SOIC
Manufacturer
Atmel
Datasheet
1.AT45DB321D-MU.pdf
(57 pages)
Specifications of AT45DB321D-SU
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
32M (8192 pages x 528 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SOIC EIAJ
Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 64
Timing Type
Synchronous
Interface Type
Serial-SPI
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
528 B x 8192
Memory Configuration
8192 Pages X 528 Bytes
Clock Frequency
66MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT45DB321D-SU
Manufacturer:
ATMEL
Quantity:
15 000
Company:
Part Number:
AT45DB321D-SU
Manufacturer:
ATMEL
Quantity:
1 000
Company:
Part Number:
AT45DB321D-SU
Manufacturer:
Atmel
Quantity:
7 530
Company:
Part Number:
AT45DB321D-SU
Manufacturer:
ATMEL
Quantity:
3
Part Number:
AT45DB321D-SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
AT45DB321D-SU-2.5
Manufacturer:
ON
Quantity:
31 000
Part Number:
AT45DB321D-SU-SL955
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Figure 25-2. Algorithm for Randomly Modifying Data
Notes:
3597O–DFLASH–10/09
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase and program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
START
END
provide address of
page to modify
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
AT45DB321D
47