AT45DB321D-SU Atmel, AT45DB321D-SU Datasheet - Page 28

• Manufacturer Part Number: AT45DB321D-SU
• Description: IC FLASH 32MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB321D-SU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 32M (8192 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SOIC EIAJ
• Density: 32 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 64
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 528 B x 8192
• Memory Configuration: 8192 Pages X 528 Bytes
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

15. Command Tables
28
AT45DB321D
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-
timed portion of a Group D command, only the Status Register Read command should be
executed.
Table 15-1.
Table 15-2.
Command
Main Memory Page Read
Continuous Array Read (Legacy Command)
Continuous Array Read (Low Frequency)
Continuous Array Read (High Frequency)
Buffer 1 Read (Low Frequency)
Buffer 2 Read (Low Frequency)
Buffer 1 Read
Buffer 2 Read
Command
Buffer 1 Write
Buffer 2 Write
Buffer 1 to Main Memory Page Program with Built-in Erase
Buffer 2 to Main Memory Page Program with Built-in Erase
Buffer 1 to Main Memory Page Program without Built-in Erase
Buffer 2 to Main Memory Page Program without Built-in Erase
Page Erase
Block Erase
Sector Erase
Chip Erase
Main Memory Page Program Through Buffer 1
Main Memory Page Program Through Buffer 2
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
Read Commands
Program and Erase Commands
C7H, 94H, 80H, 9AH
3597O–DFLASH–10/09
Opcode
Opcode
7CH
D2H
E8H
0BH
D1H
D3H
D4H
D6H
84H
87H
83H
86H
88H
89H
81H
50H
82H
85H
03H