IDT70V3569S5BC IDT, Integrated Device Technology Inc, IDT70V3569S5BC Datasheet - Page 7

• Manufacturer Part Number: IDT70V3569S5BC
• Description: IC SRAM 576KBIT 5NS 256BGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70V3569S5BC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 576K (16K x 36)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 256-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 70V3569S5BC

DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. At V
2. V
Capacitance
(T
NOTES:
1. These parameters are determined by device characterization, but are not
2. 3dV references the interpolated capacitance when the input and output switch
3. C
IDT70V3569S
High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM
Symbol
V
V
V
V
C
A
production tested.
from 0V to 3V or from 3V to 0V.
Symbol
OH
OH
OL
OL
C
OUT
OUT
DDQ
= +25°C, F = 1.0MH
IN
|I
|I
LO
(3.3V)
(2.5V)
(3.3V)
(2.5V)
LI
(3)
DD
|
|
is selectable (3.3V/2.5V) via OPT pins. Refer to p.4 for details.
also references C
< - 2.0V input leakages are undefined.
Input Capacitance
Output Capacitance
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
I/O
(1)
.
Parameter
(2)
(2)
(2)
(2)
Z
(1)
) PQFP ONLY
Conditions
V
V
OUT
IN
= 3dV
= 3dV
(2)
I
I
I
I
V
CE
OL
OH
OL
OH
DDQ
0
= +4mA, V
= +2mA, V
= -4mA, V
= -2mA, V
Max.
10.5
= V
= Max., V
8
IH
or CE
4831 tbl 07
Unit
pF
pF
DDQ
DDQ
DDQ
DDQ
IN
1
6.42
= 0V to V
= V
= Min.
= Min.
= Min.
= Min.
7
IL
, V
Test Conditions
OUT
DDQ
(V
= 0V to V
DD
= 3.3V ± 150mV)
DDQ
Industrial and Commercial Temperature Ranges
Min.
2.4
2.0
___
___
___
___
70V3569S
Max.
0.4
0.4
10
10
___
___
4831 tbl 08
Unit
µA
µA
V
V
V
V