IDT70261L20PF IDT, Integrated Device Technology Inc, IDT70261L20PF Datasheet - Page 4

no-image

IDT70261L20PF

Manufacturer Part Number
IDT70261L20PF
Description
IC SRAM 256KBIT 20NS 100TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70261L20PF

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
256K (16K x 16)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70261L20PF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70261L20PF
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PF
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PF8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PFGI
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PFI
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PFI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
NOTE:
1. At Vcc
AC Test Conditions
I
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
V
T
T
OUT
BIAS
STG
TERM
Symbol
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
maximum, and is limited to < 20mA for the period of V
Symbol
V
|I
V
TERM
|I
LO
OH
OL
LI
(2)
|
|
<
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
2.0V, input leakages are undefined.
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Under Bias
Storage
DC Output
Current
Terminal Voltage
with Respect
to GND
Temperature
Temperature
Rating
Parameter
(1)
Commercial
& Industrial
-0.5 to +7.0
-55 to +125
-65 to +150
50
I
I
V
CE = V
OL
OH
CC
Figures 1 and 2
GND to 3.0V
= 4mA
= -4mA
TERM
= 5.5V, V
(1)
1.5V
1.5V
3ns
IH
, V
> Vcc + 10%.
Test Conditions
OUT
IN
3039 tbl 06
3039 tbl 09
Unit
mA
o
o
V
= 0V to V
= 0V to V
C
C
6.42
4
Capacitance
DATA
NOTES:
1. This parameter is determined by device characterization but is not production
2. 3dV represents the interpolated capacitance when the input and output signals
CC
CC
Figure 1. AC Output Test Load
Symbol
BUSY
tested.
switch from 0V to 3V or from 3V to 0V.
C
C
OUT
OUT
INT
(V
IN
CC
347Ω
Input Capacitance
Output
Capacitance
= 5.0V ± 10%)
Min.
Industrial and Commercial Temperature Ranges
2.4
___
___
___
Parameter
70261S
(1)
5V
3039 drw 03
893Ω
Max.
30pF
(T
0.4
10
10
___
A
= +25°C, f = 1.0Mhz)
DATA
Conditions
V
V
OUT
Min.
IN
2.4
Figure 2. Output Test Load
___
___
___
OUT
= 3dV
*Including scope and jig.
= 3dV
70261L
(for t
347Ω
(2)
LZ
, t
Max.
HZ
0.4
___
5
5
, t
Max.
WZ
10
9
, t
3039 tbl 08
OW
5V
3039 drw 04
3039 tbl 07
)
Unit
Unit
µ A
µ A
893Ω
pF
pF
V
V
5pF*
,

Related parts for IDT70261L20PF