NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 8

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Description
Table 2.
1. x16 organization only available for MCP.
Figure 1.
8/67
NAND01G-
Reference
B2C
NAND01GW3B2C
NAND01GW4B2C
NAND01GR3B2C
NAND01GR4B2C
WP
W
Part number
E
R
Product description
Logic block diagram
Command register
register/counter
Data register
Command
interface
Address
Density
1 Gbit
logic
width
Bus
x16
x8
words
Page
bytes
2048
1024
size
+64
+32
P/E controller,
Block
words
high voltage
bytes
128K
64K+
size
+4K
2K
generator
Memory
pages x
blocks
array
1024
64
Operating
voltage
1.95 V
1.95 V
1.7 to
2.7 to
1.7 to
2.7 to
3.6 V
3.6 V
Random
access
(max)
25 µs
25 µs
25 µs
25 µs
time
1024-Mbit + 32Mbit
Page buffer
Y decoder
memory array
NAND flash
Buffers
I/O
Sequential
access
(min)
45 ns
25 ns
45 ns
25 ns
time
Timings
Program
200 µs
Page
(typ)
time
NAND01G-B2C
Block
erase
(typ)
2 ms
AI14291
VFBGA153
VFBGA63
Package
TSOP48
(1)
(1)