NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 55

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2C
Figure 26. Read status register AC waveforms
Figure 27. Read electronic signature AC waveforms
1. Refer to
contained in byte 3 and 4.
I/O
CL
W
R
E
I/O
CL
AL
W
E
R
Table 12
for the values of the manufacturer and device codes, and to
Read Electronic
tCLHWH
90h
Command
Signature
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
Byte1
tDZRL
Man.
code
tWHRL
tCLLRL
Device
code
Byte2
tRLQV
tELQV
Table 13
Byte3
00h
and
Status Register
tRHQX
Table 14
tEHQX
tEHQZ
tRHQZ
see Note.1
Output
DC and AC parameters
Byte4
for the information
ai13108b
ai08667
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