NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 51

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2C
Table 25.
Symbol
t
t
t
t
t
RHQX
t
RLQX
t
t
t
t
t
t
t
t
t
ALLRL1
ALLRL2
t
t
t
t
t
t
t
t
t
WHWH
t
t
t
t
EHCLX
BLBH1
BLBH2
BLBH3
BLBH4
t
EHALX
BLBHx
CLLRL
VHWH
WHBH
EHQX
WHBL
WHRL
RHWL
EHQZ
RHQZ
VLWH
RHRL
RLRH
RLQV
BHRL
DZRL
ELQV
RLRL
(4)
(4)
symbol
t
t
t
t
t
ADL
t
t
PROG
t
t
WW
t
t
RLOH
t
t
BERS
t
t
Alt.
t
WHR
RHW
t
AC characteristics for operations
t
t
RST
CLR
CHZ
RHZ
CEA
REH
t
t
REA
CSD
t
WB
RR
OH
RC
t
AR
RP
IR
R
(2)
(3)
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Busy time during cache read
Ready/Busy Low to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Last address latched to data loading time during program
operations
Write protection time
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Chip Enable High or Read Enable High to Output Hold
Read Enable Low to Output Hold
Read Enable Low to
Read Enable High
Read Enable Low to
Read Enable Low
Read Enable Low to
Output Valid
Write Enable High to
Ready/Busy High
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
Chip Enable High to Address Latch or Command Latch
don’t care
Read Enable High to Write Enable Low
Read Enable High to Output Hi-z
Read electronic signature
Read cycle
Read busy time
Program busy time
Erase busy time
Reset busy time, during ready
Reset busy time, during read
Reset busy time, during program
Reset busy time, during erase
Read Enable High hold time
Read Enable pulse width
Read cycle time
Read Enable access time
Read ES access time
Read busy time
Parameter
(1)
(5)
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Typ
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
DC and AC parameters
devices
1.8 V
700
500
100
100
100
100
100
10
10
20
25
25
10
10
30
45
15
15
25
45
30
25
60
10
3
3
5
5
0
devices
700
500
100
100
100
100
3 V
10
10
20
25
25
10
10
30
70
25
10
15
12
25
20
25
60
10
3
3
5
5
0
5
51/67
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns