CY7C1049DV33-10VXIT Cypress Semiconductor Corp, CY7C1049DV33-10VXIT Datasheet - Page 7

• Manufacturer Part Number: CY7C1049DV33-10VXIT
• Description: IC SRAM 4MBIT 10NS 36-SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1049DV33-10VXIT

• Memory Size: 4M (512K x 8)
• Package / Case: 36-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 512K X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOJ
• No. Of Pins: 36
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 38-05475 Rev. *G
13. Device is continuously selected. OE, CE = V
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
16. Data IO is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
DATA OUT
ADDRESS
ADDRESS
CURRENT
DATA I/O
DATA OUT
ADDRESS
SUPPLY
CE
WE
CE
V
OE
OE
CC
NOTE 17
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
PU
IH
.
t
LZCE
t
SA
t
HZOE
IL
.
t
t
LZOE
ACE
Figure 4. Read Cycle No. 2 (OE Controlled)
50%
t
t
OHA
DOE
Figure 3. Read Cycle No. 1
t
t
AA
AW
t
t
RC
SCE
t
WC
t
RC
DATA
t
t
PWE
SD
IN
[13, 14]
DATA VALID
VALID
[14, 15]
t
HZOE
t
HA
DATA VALID
[16, 17]
t
HD
t
HZCE
t
CY7C1049DV33
PD
50%
IMPEDANCE
HIGH
Page 7 of 14
I
I
CC
SB
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