CY7C1049DV33-10VXIT Cypress Semiconductor Corp, CY7C1049DV33-10VXIT Datasheet - Page 4

IC SRAM 4MBIT 10NS 36-SOJ

CY7C1049DV33-10VXIT

Manufacturer Part Number
CY7C1049DV33-10VXIT
Description
IC SRAM 4MBIT 10NS 36-SOJ
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr

Specifications of CY7C1049DV33-10VXIT

Memory Size
4M (512K x 8)
Package / Case
36-SOJ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
90 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Memory Configuration
512K X 8
Supply Voltage Range
3V To 3.6V
Memory Case Style
SOJ
No. Of Pins
36
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1049DV33-10VXIT
Manufacturer:
CYPRESS
Quantity:
2 100
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Manufacturer:
CY
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Manufacturer:
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Quantity:
20 000
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on
V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Document Number: 38-05475 Rev. *G
Note
V
V
V
V
I
I
I
I
I
C
C
IX
OZ
CC
SB1
SB2
2. V
Parameter
Parameter
CC
OH
OL
IH
IL
IN
OUT
[2]
[2]
to Relative GND
IL
(min.) = –2.0 V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current GND < V
V
Current
Automatic CE
Power down Current
—TTL Inputs
Automatic CE
Power down Current
—CMOS Inputs
Input Capacitance
IO Capacitance
[2]
CC
[2]
................................. –0.3 V to V
Operating Supply
............................. –0.3 V to V
Description
Description
[2]
IH
................................–0.3 V to +4.6 V
(max) = V
CC
[2]
+ 2 V for pulse durations of less than 20 ns.
V
V
GND < V
Output Disabled
V
f = f
Max V
V
Max V
V
f = 0
T
A
CC
CC
CC
IN
IN
= 25 C, f = 1 MHz, V
MAX
< V
> V
= Min, I
= Min, I
= Max,
CC
CC
IL
CC
= 1/t
Test Conditions
, CE > V
, f = f
, CE > V
I
OUT
< V
CC
CC
– 0.3 V, or V
OH
OL
RC
< V
+ 0.3 V
+ 0.3 V
CC
MAX
= 8.0 mA
= –4.0 mA
CC
IH
CC
; V
,
– 0.3 V,
IN
CC
IN
> V
100 MHz
= 3.3 V
< 0.3 V,
83 MHz
66 MHz
40 MHz
Test Conditions
IH
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Industrial
Automotive
or
Range
–0.3
Min
-10 (Industrial)
2.4
2.0
–1
–1
–40 C to +125 C 3.3 V  0.3 V
–40 C to +85 C 3.3 V  0.3 V
Temperature
Ambient
V
CC
Max
0.4
0.8
+1
+1
90
80
70
60
20
10
+ 0.3
-12 (Automotive)
–0.3
Min
2.4
2.0
–1
–1
CY7C1049DV33
V
CC
V
CC
Max
Max
0.4
0.8
+1
+1
95
85
75
25
15
8
8
+ 0.3
Page 4 of 14
Speed
10 ns
12 ns
Unit
Unit
mA
mA
mA
mA
mA
mA
A
A
pF
pF
V
V
V
V
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