CY7C1049DV33-10VXIT Cypress Semiconductor Corp, CY7C1049DV33-10VXIT Datasheet - Page 5

IC SRAM 4MBIT 10NS 36-SOJ

CY7C1049DV33-10VXIT

Manufacturer Part Number
CY7C1049DV33-10VXIT
Description
IC SRAM 4MBIT 10NS 36-SOJ
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr

Specifications of CY7C1049DV33-10VXIT

Memory Size
4M (512K x 8)
Package / Case
36-SOJ
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
90 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Memory Configuration
512K X 8
Supply Voltage Range
3V To 3.6V
Memory Case Style
SOJ
No. Of Pins
36
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1049DV33-10VXIT
Manufacturer:
CYPRESS
Quantity:
2 100
Part Number:
CY7C1049DV33-10VXIT
Manufacturer:
CY
Quantity:
6 250
Part Number:
CY7C1049DV33-10VXIT
Manufacturer:
CYPRESS/PBF
Quantity:
146
Part Number:
CY7C1049DV33-10VXIT
Manufacturer:
专营CYPRESS
Quantity:
20 000
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
Data Retention Characteristics
Over the Operating Range
Notes
Document Number: 38-05475 Rev. *G
V
I
t
t
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) are tested using the load conditions shown in
5. No input may exceed V
6. Full device operation requires linear V
CCDR
CDR
R
Parameter
Parameter
DR
[6]
in
[3]
Figure 1
JA
JC
V
10 ns device
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
CE
CC
(c).
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
OUTPUT
CC
High Z characteristics:
for Data Retention
Description
CC
+ 0.3 V.
Description
Z = 50 
CC
ramp from V
OUTPUT
Still Air, soldered on a 3 × 4.5 inch, two layer printed
circuit board
3.3 V
t
(a)
CDR
Figure 1. AC Test Loads and Waveforms
1.5 V
50 
3.0V
DR
Figure 2. Data Retention Waveform
to V
5 pF
CC(min.)
V
V
(c)
CC
IN
30 pF*
> V
= V
Test Conditions
> 50 s or stable at V
R 317
DATA RETENTION MODE
CC
DR
– 0.3 V or V
= 2.0 V, CE > V
351
Figure 1
V
R2
GND
3.0 V
DR
Rise Time: 1 V/ns
Conditions
> 2V
(a). High Z characteristics are tested for all speeds using the test load shown
CC(min.)
IN
< 0.3 V
CC
> 50 s.
[5]
– 0.3 V
10%
90%
[4]
Industrial
ALL INPUT PULSES
Auto
3.0V
36-pin SOJ
(b)
Package
t
R
57.91
36.73
Min
2.0
t
RC
CY7C1049DV33
0
Fall Time: 1 V/ns
44-pin TSOP II
90%
Package
10%
50.66
17.17
Max
10
15
Page 5 of 14
C/W
C/W
Unit
Unit
mA
mA
ns
ns
V
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