NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 8

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NAND128W3A2BN6F

Manufacturer Part Number
NAND128W3A2BN6F
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NAND
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
16KByte x 1024
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND128W3A2BN6F
Manufacturer:
MICROCHIP
Quantity:
1 000
Part Number:
NAND128W3A2BN6F
Manufacturer:
ST
Quantity:
20 000
Description
Figure 1.
Table 3.
8/59
Symbol
I/O8-15
I/O0-7
V
V
WP
RB
NC
DU
AL
CL
W
E
R
DD
SS
Logic diagram
Signal names
Data input/outputs for x16 devices
Data input/outputs, address inputs, or command inputs for x8 and x16
devices
Address Latch Enable
Command Latch Enable
Chip Enable
Read Enable
Ready/Busy (open-drain output)
Write Enable
Write Protect
Supply voltage
Ground
Not connected internally
Do not use
WP
CL
AL
W
R
E
NAND flash
V DD
V SS
Function
RB
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
AI07557C
NAND128-A, NAND256-A
Direction
Ground
Output
Supply
Input
Input
Input
Input
Input
Input
I/O
I/O

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