NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 40

• Manufacturer Part Number: NAND128W3A2BN6F
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 16KByte x 1024
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
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Table 18.
1. Leakage currents double on stacked devices.
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
(RB)
LI
OL
IH
IL
Operating current
(erase and program lockout)
DC characteristics
Output High voltage level
Standby current (CMOS)
Output Low voltage level
Output Low current (RB)
Output leakage current
Standby current (TTL)
Input leakage current
V
Input High voltage
Input Low voltage
DD
Parameter
supply voltage
Sequential
Program
Erase
read
(1)
E=V
V
Test conditions
IN
t
WP = 0 V/V
WP = 0 V/V
I
RLRL
OH
I
E = V
OL
V
= 0 to V
V
IL,
OL
V
E = V
OUT
= −400 µA
DD
= 2.1 mA
I
OUT
minimum
= 0.4 V
–
–
–
–
–
DD
= 0 to
max
IH
-0.2
= 0 mA
DD
,
DD
DD
max
−0.3
Min
2.0
2.4
–
–
–
–
–
–
–
–
–
–
8
–
NAND128-A, NAND256-A
Typ
10
10
10
10
20
10
–
–
–
–
–
–
–
–
–
V
DD
Max
100
±10
±10
0.8
0.4
1.7
20
20
20
50
1
2
-
+0.3
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V