NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 46

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NAND128W3A2BN6F

Manufacturer Part Number
NAND128W3A2BN6F
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NAND
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
16KByte x 1024
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND128W3A2BN6F
Manufacturer:
MICROCHIP
Quantity:
1 000
Part Number:
NAND128W3A2BN6F
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
46/59
Figure 27. Page read A/read B operation AC waveform
Figure 28. Read C operation, one page AC waveform
1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 are ‘don’t care’.
RB
CL
I/O
AL
W
R
E
RB
I/O
CL
AL
W
R
E
Command
Command
Code
00h or
Code
01h
50h
cycle 1
Add.N
tWLWL
Add. M
cycle 1
Address N Input
Address M Input
cycle 2
Add.N
Add. M
cycle 2
tWHBL
tWHBH
tBLBH1
tWHALL
cycle 3
Add.N
Add. M
cycle 3
Busy
from Address N to Last Byte or Word in Page
tRLRH
Data
tALLRL2
N
Busy
tBHRL
Data
N+1
(Read Cycle time)
Data Output
tRLRL
tWHBH
Data
N+2
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
tRHQX
tEHQX
tEHQZ
tRHQZ
NAND128-A, NAND256-A
Data
Last
Data
Last
ai08033d
ai08035c

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