NAND128W3A2BN6F NUMONYX, NAND128W3A2BN6F Datasheet - Page 48

• Manufacturer Part Number: NAND128W3A2BN6F
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 16KByte x 1024
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
10.1
48/59
Figure 31. Reset AC waveform
Ready/busy signal electrical characteristics
Figures
Ready/Busy signal. The value required for the resistor R
following equation:
Therefore,
where I
max is determined by the maximum value of t
Figure 32. Ready/Busy AC waveform
RB
I/O
AL
CL
W
R
L
Figure
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
32,
FFh
Figure
ready V DD
33, and
R P min
R P min 3V
Figure 34
=
t f
(Reset Busy time)
V OL
(
-------------------------------------------------------------
V DDmax V OLmax
tBLBH4
(
)
=
I OL
show the electrical characteristics for the
busy
r
-------------------------- -
8mA
.
–
3.2V
+
+
I L
I L
P
t r
can be calculated using the
)
V OH
NI3087B
NAND128-A, NAND256-A
ai08043
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