M45PE80-VMP6G NUMONYX, M45PE80-VMP6G Datasheet - Page 38

IC FLASH 8MBIT 50MHZ 8VFQFPN

M45PE80-VMP6G

Manufacturer Part Number
M45PE80-VMP6G
Description
IC FLASH 8MBIT 50MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M45PE80-VMP6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Ic Interface Type
Serial, SPI
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Table 14.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence
5. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
38/48
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
DVCH
CHDX
CHSH
SHCH
PW
CLQV
CLQX
CH
SLCH
CHSL
SHSL
DP
PP
CL
including all the Bytes versus several sequences of only a few Bytes (1 . n . 256).
t
t
t
CH
f
f
PE
SE
W
C
R
(1)
(1)
(2)
(4)
(4)
(2)
(2)
+ t
(3)
(3)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
CLL
DIS
HO
f
DH
t
AC characteristics (75 MHz operation)
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRCR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid under 30 pF / 10 pF
Output hold time
Write Protect setup time
Write Protect hold time
S to Deep Power-down
S High to Standby mode
Write status register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Test conditions specified in
(2)(2)
Parameter
(peak to peak)
C
Table 8
Min.
D.C.
D.C.
100
100
0.1
20
6
6
5
5
2
5
5
5
0
and
Table 9
int(n/8) × 0.025
Typ.
0.8
10
11
3
1
(5)
Max.
8/6
75
33
30
15
23
20
8
3
3
5
MHz
MHz
V/ns
Unit
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs
s

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