M25P16-VME6TG NUMONYX, M25P16-VME6TG Datasheet - Page 35

• Manufacturer Part Number: M25P16-VME6TG
• Description: IC FLASH 16MBIT 75MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P16-VME6TG; M25P16-VME6TGTR

8
Figure 21. Power-up timing
Table 8.
1. These parameters are characterized only.
Initial delivery state
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
V CC (max)
Symbol
V CC (min)
t
t
PUW
V
VSL
WI
(1)
(1)
V WI
(1)
V CC
V
Time delay to Write instruction
Write Inhibit voltage
Power-up timing and V
Reset state
CC
device
of the
(min) to S Low
Program, Erase and Write commands are rejected by the device
Chip selection not allowed
Parameter
WI
threshold
tPUW
tVSL
Read access allowed
Min
1.0
30
1
Device fully
accessible
Max
2.1
10
—
AI04009C
time
Unit
ms
µs
35/59
V