M25P16-VME6TG NUMONYX, M25P16-VME6TG Datasheet - Page 42

• Manufacturer Part Number: M25P16-VME6TG
• Description: IC FLASH 16MBIT 75MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P16-VME6TG; M25P16-VME6TGTR

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Table 15.
1. Details of how to find the technology process in the marking are given in AN1995, see also
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
8. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4, int(15.3) =16.
Symbol Alt.
t
PP
t
t
SE
BE
Part
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
Applies only to products made with T9HX technology, identified with process digit ‘4’
CH
(7)
+ t
numbering.
CL
must be greater than or equal to 1/ f
AC characteristics (
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes, where n = 1
to 4)
Page Program cycle time (n bytes, where n = 5
to 256)
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
A
= 25 °C.
Parameter
T9HX technology
C
.
Table 10
) (continued)
and
Min
Table 12
int(n/8) × 0.02
Typ
0.64
0.01
0.6
13
(2)
Section 12:
(8)
Max
40
5
3
(1)
Unit
ms
s
s