M25P16-VME6TG NUMONYX, M25P16-VME6TG Datasheet - Page 21

IC FLASH 16MBIT 75MHZ 8VDFPN

M25P16-VME6TG

Manufacturer Part Number
M25P16-VME6TG
Description
IC FLASH 16MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheets

Specifications of M25P16-VME6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Cell Type
NOR
Density
16Mb
Access Time (max)
15ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFPN EP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P16-VME6TG
M25P16-VME6TGTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P16-VME6TG
Manufacturer:
NUMONYX
Quantity:
8 000
Part Number:
M25P16-VME6TG
Manufacturer:
ST
0
6.2
Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
l
l
l
l
l
l
Figure 9.
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) instruction sequence
S
C
D
Q
High Impedance
0
(Figure
1
2
Instruction
9) resets the Write Enable Latch (WEL) bit.
3
4
5
6
7
AI03750D
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