PESD3V3V4UW T/R NXP Semiconductors, PESD3V3V4UW T/R Datasheet - Page 6

• Manufacturer Part Number: PESD3V3V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.3 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3V4UW,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 3. Peak pulse power as a function of exponential
P
(W)
PP
10
10
1
2
T
pulse duration; typical values
1
amb
= 25 C
10
Table 9.
T
[1]
[2]
[3]
Symbol Parameter
V
r
amb
dif
CL
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
10
= 25 C unless otherwise specified.
2
clamping voltage
differential resistance
Characteristics
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
10
3
006aaa261
t
p
( s)
Rev. 03 — 28 January 2008
10
4
Very low capacitance quadruple ESD protection diode arrays
…continued
Fig 4. Relative variation of peak pulse power as a
P
Conditions
I
I
I
I
I
PP(25 C)
PP
PP
PP
PP
R
P
= 1 mA
PP
= 1 A
= 2 A
= 1 A
= 1.7 A
1.2
0.8
0.4
0
function of junction temperature; typical values
0
50
[1][2][3]
PESDxV4UF/G/W
Min
-
-
-
-
-
-
100
Typ
-
-
-
-
-
-
150
© NXP B.V. 2008. All rights reserved.
001aaa633
T
j
Max
9
11
11
13
200
100
( C)
200
Unit
V
V
V
V
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