PESD3V3V4UW T/R NXP Semiconductors, PESD3V3V4UW T/R Datasheet - Page 13

• Manufacturer Part Number: PESD3V3V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.3 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3V4UW,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 16. Reflow soldering footprint PESDxV4UW (SOT665)
Reflow soldering is the only recommended soldering method.
2.00 1.70 1.00
0.075
Rev. 03 — 28 January 2008
0.70
(2 )
Very low capacitance quadruple ESD protection diode arrays
solder lands
solder resist
0.45
(2 )
placement area
occupied area
2.45
2.10
1.20
2.20
1.60
PESDxV4UF/G/W
1.375
1.25
Dimensions in mm
0.30
0.375
0.15
(2x)
(2 )
© NXP B.V. 2008. All rights reserved.
0.40
(5 )
0.55
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